Abstract
We describe an approach to studying grain structure formation in polycrystalline thin films during deposition from the vapor phase using a “grain continuum” representation of the solid. We employ three codes in concert to track the development of grains while accounting for ballistic transport and surface reaction kinetics. We show that higher precursor reactivities might well lead to higher void fractions near the substrate surface.
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© 2004 Springer-Verlag Wien
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Bloomfield, M.O., Cale, T.S. (2004). Simulation of Microstructure Formation during Thin Film Deposition. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_76
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_76
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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