Abstract
We have studied the impact on drive current of bringing the S/D contacts closer to the gate edge. We found that there is an optimal location for contact placement beyond which Idsat decreases. The decrease in Idsat is due to two phenomena: i) current crowding and ii) increase in contact resistance. We show that raised S/D structure will be able to circumvent these problems and allow for further improvement in drive current.
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Subba, N., Luning, S., Riccobene, C., Feudel, T., Wei, A., Horstmann, M. (2004). Optimal Contact Placement in Partially Depleted SOI with Application to Raised Source-Drain Structures. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_75
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_75
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
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