Abstract
Experiments on minority carrier diffusion using an a.c. photocurrent method exhibit very good agreement with Klaassens’s model [1] at temperatures >250K – 500K, but very large deviations at 100K and intermediate doping levels. They can be perfectly explained using published results on exciton diffusion constants and on concentrations of excitons in electron-hole-plasma. Our results confirm strongly that simulation of bipolar devices at low temperatures requires consideration of exciton formation.
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References
D.B.M. Klaassen. A unified mobility model for device simulation-I+II. Model equations and concentration dependence / Temperature dependence of carrier mobility and lifetime. Solid-State Electronics, 35(7):953–967, 1992.
H. Schlangenotto, H. Maeder, and W. Gerlach. Temperature Dependence of the Radiative Recombination Coefficient in Silicon. Physica Status Solidi (a), 21:357–367, 1974.
R. Corkish, D.S.-P. Chan, and M.A. Green. Excitons in silicon diodes and solar cells: A three-particle theory. Journal of Applied Physics, 79(1): 195–203, January 1996.
D.E. Kane and R.M. Swanson. Effect of electron-hole scattering on the current flow in semiconductors. Journal of Applied Physics, 72(11): 5294–5304, December 1992.
T.P. McLean and E.G.S. Paige. A Theory of the Effects of Carrier-Carrier Scattering on Mobility in Semiconductors. Journal of Physics and Chemistry of Solids, 16:220–236, 1960.
T.T. Mnatsakanov. Transport Coefficients and Einstein Relation in a High Density Plasma of Solids. Physica Status Solidi (b), 143:225–234, 1987.
B. Laurich, H. Hillmer, and A. Forchel. Optical time-of-flight investigation of the exciton transport in silicon. Journal of Applied Physics, 61(4): 1480–1485, February 1987.
M.A. Tamor and J.P. Wolfe. Drift and Diffusion of Free Excitons in Si. Physical Review Utters, 44(25): 1703–1706, June 1980.
W. Gerlach, H. Schlangenotto, and H. Maeder. On the Radiative Recombination Rate in Silicon. Physica Status Solidi (a), 13:277–283, 1972.
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© 2004 Springer-Verlag Wien
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Mohrhof, J., Silber, D. (2004). Experiments on Minority Carrier Diffusion in Silicon: Contributions of Excitons. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_67
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_67
Publisher Name: Springer, Vienna
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