Abstract
This paper deals with drain current characteristics for ultra small SOIMOSFETs which include single ion or multi ions in the channel. A robust 3D device simulator with density gradient model is developed. Simulation results for discrete dopants devices are discussed comparing with the ones for continuous dopant devices.
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© 2004 Springer-Verlag Wien
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Toyabe, T. (2004). Single Ion and Multi Ion MOSFETs Simulation with Density Gradient Model. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_65
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_65
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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