Abstract
In this paper we present a derivation of a very convenient approach to include quantum confinement effects in drift-diffusion or hydrodynamic device simulators, without explicitly solving the Schrödinger equation. With respect to similar methods recently proposed in the literature, the presented approach has a few advantages: it does not depend on the transport model (drift-diffusion or hydrodynamic); it can straightforwardly include Fermi-Dirac statistics; it provides an additional degree of freedom for calibration, which is particularly useful for considering non planar device structures; finally, it can be discretized in such a way to exhibit very stable convergence properties.
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References
D. Böhm, Phys. Rev. 85, 166 (1952), 85, 180 (1952).
G. J. Iafrate, H. L. Grubin, and D. K. Ferry, J. Phys. C, 42, C10–307 (1981).
M. G. Ancona and G. J. Iafrate, Phys. Rev. B 39, 9536 (1989).
A. Wettstein, A. Schenk, W. Fichtner, IEEE Trans. Electron Devices 48, 279 (2001).
G. Curatola, G. Iannaccone, Computational Material Science 28, 342 (2003).
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Iannaccone, G., Curatola, G., Fiori, G. (2004). Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_64
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_64
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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