Skip to main content
SpringerLink
Log in

Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes

  • Conference paper
Simulation of Semiconductor Processes and Devices 2004

Abstract

The paper first describes the basic radiation-induced mechanisms such as transient effects, ionization phenomena and displacement damage. Subsequently, the impact of irradiation on advanced CMOS technology nodes is demonstrated in order to illustrate the underlying physical phenomena. Both bulk and silicon-on-insulator (SOI) technologies will be addressed. A third section discusses the present understanding and the difficulties associated with modeling of irradiation-induced device degradation. Finally, an outlook is given for some emerging semiconductor technologies such as e.g. SiGe, strained silicon, Ge and GeOI. Some aspects of cryogenic irradiations, of key importance for space applications, are also briefly mentioned.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. C. Claeys and E. Simoen, “Radiation effects in advanced materials and devices”, Springer Verlag, Heidelberg, 2002.

    Google Scholar 

  2. V.A. Van Lint, T.M. Flanahan, R.E. Leadon, J.A. Naber and V.C. Rogers, “Mechanisms of radiation effects in electronic material”, Wiley Interscience, New York, 1980.

    Google Scholar 

  3. T.P. Ma and P.V. Dressendorfer, “Ionization radiation effects in MOS devices and circuits”, Wiley Interscience, New York, 1989.

    Google Scholar 

  4. M. Ceschia, A. Paccagnella, A. Cester, A. Scarpa and G. Ghidini, “Radiation-induced leakage current and stress induced leakage current in ultra-thin gate oxides”, IEEE Trans. Nucl. Sci., 45, pp. 2375–2382, 1998.

    Article  Google Scholar 

  5. M. Walters and A. Reisman, “Radiation-induced neutral electron trap generation in electrically biased insulated gate field effect transistor gate insulators”, J. Electrochem. Soc., 138, pp. 2756–2762, 1991.

    Article  Google Scholar 

  6. A. Balasinski and T.P. Ma, “Impact of radiation-induced nonuniform damage near MOSFETjunction”, IEEE Trans. Nucl. Sci., 40, pp. 1286–1292, 1993.

    Google Scholar 

  7. A. Acovic, C.C. Hsu, L.-C. Hsia, A. Balasinski and T.P. Ma, “Effects of X-ray irradiation on GIDL in MOSFETs”, IEEE Electron Dev. Lett., 13, pp. 189–191, 1992.

    Article  Google Scholar 

  8. R.A. Gdula, “The effect of processing on radiation damage in SiO2”, IEEE Trans. Electron Dev., 16, pp. 644–647, 1979.

    Article  Google Scholar 

  9. E. Simoen, J. Hermans, E. Augendre, T. Marescaux, C. Claeys, G. Badenes and A. Mohammazadeh, “Evidence for short-channel effect in the radiation response of 0.18 jim CMOS transistors”, Proc. RADECS 2000 Workshop, pp. 25–31, 2000.

    Google Scholar 

  10. E. Simoen, A. Mercha, A. Morata, K. Hayama, G. Richardson, J.M. Rafi, E. Augendre, C. Claeys, A. Mohammazadeh, H. Ohyama and A. Romano-Rodriguez “Short channel radiation effects in 60 MeV proton-irradiated 0.13 jim CMOS transistors”, IEEE Trans. Nucl. Sci., 50, pp. 2426–2432, 2003.

    Article  Google Scholar 

  11. M.R. Shaneyfelt, P.E. Dodd, B.L. Draper and R.S. Flores, “Challenges in hardening technologies using shallow-trench isolation”, IEEE Trans. Nucl. Sci., 45, pp. 2584–2592, 1998.

    Article  Google Scholar 

  12. S. Cristoloveanu, “SOI technology: The future will not scale down”, Semiconductor Silicon 2002, The Electrochem. Soc., PV 2002-02, pp. 328–341, 2002

    Google Scholar 

  13. J.R. Schwank, V. Ferlet-Cavrois, M.R. Shaneyfelt, P. Paillet and P.E. Dodd, “Radiation effects in SOI technologies”, IEEE Trans. Nucl. Sci., 50, pp. 522–538, 2003.

    Article  Google Scholar 

  14. E. Simoen, J.M. Rafi, A. Mercha and C. Claeys, “Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation”, Solid-State Electron., 48, pp. 1045–1054, 2004.

    Article  Google Scholar 

  15. A. Mercha, J.M. Rafi, E. Simoen and C. Claeys, ”‘Liner Kink Effect’ induced by valence band electron tunneling in ultra-thin gate oxide bulk and SOI MOSFETs”, IEEE Trans. Electron Dev, 50, pp. 1675–1682, 2003.

    Article  Google Scholar 

  16. J. Pretet, T. Matsumoto, T. Poiroux, S. Cristoloveanu, R. Gwoziecki and C. Raynaud, “New mechanism of body charging in partially depleted SOI-MOSFETs”, Proc. ESSDERC 2002, pp, 515–518, 2002.

    Google Scholar 

  17. T. Poiroux, O. Faynot, C. Tabone, H. Tigelaar, H. Mogul et al., “Emerging floating body effects in advanced partially depleted SOI devices”, Proc. IEEE Int. SOI Conf, pp. 99–100, 2002.

    Google Scholar 

  18. J.M. Rafi. A. Mercha. E. Simoen and C. Claeys, “Impact of gate tunneling floating body charging on drain current transients of 0.10 μm CMOS partially depleted SOI MOSFETs”, Solid-State Electron., 48, pp. 1211–1221, 2004.

    Article  Google Scholar 

  19. A. Mercha, E. Simoen, H. van Meer and C. Claeys, “Low frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal-oxide semiconductor field-effect transistors”, Appl. Phys. Lett., 82, pp. 1890–1792, 2003

    Article  Google Scholar 

  20. N. Lukyanchikova, M.V. Petrichuk, P. Garbar, A. Mercha, E. Simoen and C. Claeys, “Electron Valence Band Tunneling-Induced Lorentzian Noise in Deep Submicron Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors”, J. Appl. Phys., 94, pp. 4461–4469, 2003.

    Article  Google Scholar 

  21. A. Simoen, A. Mercha, J.M. Rafi, C. Claeys, N. Lukyanchikova, M.V. Petrichuk and N. Garbar, “High Energy Proton Irradiation Induced Changes in the Linear Kink Noise Overshoot of 0.1 μm Partially Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors”, J. Appl. Phys., 95, pp. 4084–4092, 2004.

    Article  Google Scholar 

  22. E. Simoen, A. Mercha, C. Claeys, N. Lukyanchikova and N. Garbar, “Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs”, IEEE Trans. Electron Dev., 51, pp. 1008–1016, 2004

    Article  Google Scholar 

  23. K. Hayama, K. Takakura, H. Ohyama, J.M. Rafi, A. Mercha, E. Simoen, C. Claeys and M. Kokkoris, to be presented at NSREC 2004.

    Google Scholar 

  24. A. Scarpa, A. Paccagnella, F. Montera, G. Ghibaudo, G. Pananakanis, G Ghidini and P.G. Fuochi, “Ionising radiation-induced leakage current in ultra-thin gate oxides”, IEEE Trans. Nucl. Sci., 44, pp. 1818–1825, 1997.

    Article  Google Scholar 

  25. C.-H. Ang, C.-H. Ling, Z.-Y. Cheng, S.-J. Kim and B.-J. Cho, “Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides”, IEEE Trans. Nuc. Sci., 47, pp. 2758–2764, 2000.

    Article  Google Scholar 

  26. G.D. Wilk, R.M. Wallace and J.M. Anthony, “High-k gate dielectrics: Current status and material properties considerations”, J. Appl. Phys., 89, pp. 5243–5275, 2001.

    Article  Google Scholar 

  27. C.-W. Wang, S.-F. Chen and G.-T. Chen, “Gamma-ray-irradiation effects on he leakage current and reliability of sputtered TiO2 gate oxide in metal-oxide-semiconductor capacitors”, J. App. Phys., 91, pp. 9198–9203, 2002.

    Article  Google Scholar 

  28. J.A. Felix, M.R. Shaneyfelt, D.M. Fleetwood, T.L. Meisenheimer, J.R. Schwank, R.D. Schrimpf, P.E. Dodd, E.P. Gusev and C. D’Emic, “Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks”, IEEE Trans. Nucl. Sci., 50, pp. 1910–1918, 2003.

    Article  Google Scholar 

  29. P.E. Bunson, M. Di Ventra, S.T. Pantelides, R.D. Schrimpf and K.F. Galloway, “Ab initio calculations of H energies in SiO2: Implications for transport”, IEEE Trans. Nucl. Sci., 46, pp. 1568–1573,1999.

    Article  Google Scholar 

  30. S.N. Rashkeev, C.R. Cirba, D.M. Fleetwood, R.D. Schrimpf, S.C. Witczak, A. Michez and S.T. Pantelides, “Physical model for enhanced interface-trap formation at low dose rates”, IEEE Trans. Nuc. Sci., 49, pp. 2650–2655, 2002.

    Article  Google Scholar 

  31. P.M. Lenehan and J.F. Conley Jr., “What can electron paramagnetic resonance tell us about the Si/SiO2 system”, J. Vac. Sci., B16, pp. 2134–2153, 1998.

    Google Scholar 

  32. R.E. Stahlbush, A.H. Edwards, D.L. Griscom and B.J. Mrstik, “Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors”, J. Appl. Phys., 73, pp. 658–667, 1993.

    Article  Google Scholar 

  33. J.P. Colinge, M. Gao, A. Romano-Rodriguez, H. Maes and C. Claeys, “Silicon-oninsulator Gate-Ail-Around device”, IEDM Techn. Digest, pp. 595–598, 1990.

    Google Scholar 

  34. E. Simoen, C. Claeys, S. Coenen and M. Decreton, “DC and low frequency noise characteristics of γ-irradiated Gate-All-Around silicon-on-insulator MOS transistors”, Solid State Electron., 38, pp. 1–8, 1993.

    Article  Google Scholar 

  35. C.R. Cirba, S. Cristoloveanu, R.D. Schrimpf, L.C. Feldman, D.M. Fleetwood and K.F. Galloway, “Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs”, Proc. Silicon-on-Insulator Technology and Devices IX, The Electrochem. Soc., PV 2003-05, pp. 493–498, 2003.

    Google Scholar 

  36. N.T. Fourches, “Charge buildup by irradiation in metal-oxide-semiconductor structures at cryogenic temperatures: Basic mechanisms and influence of dose and dose rate”, Phys. Rev. B, 55, pp. 7641–7652, 1997.

    Article  Google Scholar 

  37. E. Simoen, A. Mercha, Y. Creten, P. Merken, J. Putzeys, P. De Moor, C. Claeys, C. Van Hoof, A. Mohammadzadeh and R. Nickson, “Impact of irradiations performed at liquid helium temperatures on the operation of 0.7 μm CMOS devices and read-out circuits”, presented at RADECS 2003.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    C. Claeys & E. Simoen

  2. EE. Dept., KU Leuven, Belgium

    C. Claeys

Authors
  1. C. Claeys
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. Simoen
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

Rights and permissions

Reprints and permissions

Copyright information

© 2004 Springer-Verlag Wien

About this paper

Cite this paper

Claeys, C., Simoen, E. (2004). Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_42

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_42

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation