Skip to main content

Adaptive Surface Triangulations for 3D Process Simulation

  • Conference paper
Simulation of Semiconductor Processes and Devices 2004
  • 611 Accesses

Abstract

We present an enhanced smoothing algorithm in order to minimize the number of nodes in a surface triangulation while at the same time the wafer topography is maintained, and changes of geometry are limited to user-defined tolerances. Refined criteria for the protection of nodes and edges which have not to be removed because of topological reasons have been worked out. An algorithm has been implemented for the extraction of local smoothing tolerance. The use of local and material-dependent smoothing tolerance is mandatory for the optimization of surface triangulations. Our topologically correct smoothing algorithms with user-controlled tolerances provides large opportunities for increased efficiency of 3D simulation of various process steps. Some examples for this application are given.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. A. Burenkov, K. Tietzel, J. Lorenz, Optimization of 0.18μm CMOS Devices by Coupled Process and Device Simulation, Solid-State Electronics 44, 767 (2000).

    Article  Google Scholar 

  2. A. Burenkov, J. Lorenz, Corner effect in double and triple gate FinFETs, in: Proc. ESSDERC 2003, 135–138(2003).

    Google Scholar 

  3. E. Bär, J. Lorenz, H. Ryssel, Three-dimensional simulation of layer deposition. Microelectronics Journal 29, 799–804 (1998).

    Article  Google Scholar 

  4. E. Bär, J. Lorenz, Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation, IEICE TRANS. ELECTRON. E83-C(8), 1338–1342 (2000).

    Google Scholar 

  5. A. Burenkov, K. Tietzel, A. Hossinger, J. Lorenz, H. Ryssel, S. Selberherr, A computationally efficient method for three-dimensional simulation of ion implantation, IEICE TRANS. ELECTRON. E83-C(8), 1259–1266 (2000).

    Google Scholar 

  6. ISE TCAD Software, Release 9.0, ISE AG, Zurich, 2003.

    Google Scholar 

  7. 1ST Project 1999-11433 MAGICFEAT

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2004 Springer-Verlag Wien

About this paper

Cite this paper

Nguyen, PH., Burenkov, A., Lorenz, J. (2004). Adaptive Surface Triangulations for 3D Process Simulation. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_38

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_38

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics