Abstract
Subsequent to accurate 2 D inverse m odeling in the regime s ensitive to electrostatics o f industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the maximum of the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modern NMOSFET’s is only about half of the limiting thermal velocity.
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References
M. Lundstrom and Z. Ren, IEEE TED, vol. 49, pp. 133–141, Jan 2002.
A. Lochtefeld and D. Antoniadis, IEEE EDL, vol. 22, pp. 591–593, Dec. 2001.
A. Lochtefeld and D. Antoniadis, IEEE EDL, vol. 22, pp. 95–97, Feb. 2001.
I. Djomehri and D.A. Antoniadis, IEEE TED, vol. 49, pp. 568–575, April. 1998.
A. Duncan, U. Ravaioli, and J. Jakurmeit, IEEE TED, vol. 45, pp. 867–876, April. 1998.
B. Winstead, H. Tsuchiya, U. Ravaioli, Nanotech 2001, pp. 566–569.
Yamakawa, et al., Miyatsuji, Masaki, and Ravaioli, JAP, vol. 79, pp. 911–916, Jan. 1996.
B.K. Ridley, J. Phys. C, vol. 10, pp. 1589–1593, 1977.
H.M. Nayfeh, C.W. Leitz, A.J. Pitera, E.A. Fitzgerald, J.L. Hoyt, D.A. Antoniadis, IEEE EDL., vol 24, pp. 248–250, April 2003.
J.Y. Tang and Karl Hess, JAP, vol. 54, pp. 5139–5144, Sep. 1983.
Jungemann, Meinerzhagen “Hierarchial Device Simulation,” Springer Engineering 2003.
K. Natori, JAP, vol. 76, pp. 4879–4890, 1994.
Lundstrom, Mark, IEEE EDL., vol. 22, pp. 293–295, June 2001.
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Nayfeh, O.M., Yu, S., Antoniadis, D.A. (2004). On the Relationship Between Carrier Mobility and Velocity in Sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_28
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_28
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