Abstract
Comprehensive physics-based simulations of GaN-based light-emitting diodes and laser diodes are presented. The talk discusses unique material properties of nitride compounds as well as performance-limiting physical mechanisms like self-heating, current crowding, and carrier leakage. Measurements are used to validate the models and to extract critical device parameters.
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Piprek, J. (2004). Simulation of GaN-based Light-Emitting Devices. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_25
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_25
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
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