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Modeling dopant diffusion in SiGe and SiGeC layers

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Simulation of Semiconductor Processes and Devices 2004

Abstract

Following the developement of a unified diffusion model valid for all usual dopants in SiGe layers [1], considering the effect of carbone diffusion on point defects concentrations extends the application of our model to strained SiGeC layers. Using a new SIMS methodology, the study of As intrinsic diffusion in SiGe and SiGeC layers is performed, at low concentration and under equilibrium annealing conditions. Arsenic enhanced diffusion in fully-strained SiGe and SiGeC layers on Si substrates was successfully compared to the unified diffusion model.

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Author information

Authors and Affiliations

  1. STMicroelectronics, 850 rue Jean Monnet., F-38926, Crolles cedex, France

    A. Pakfar, C. Fellous, D. Dutartre, T. Schwartzmann & H. Jaouen

  2. LPM — INSA de Lyon, F-69621, Villeurbanne cedex, France

    A. Pakfar & A. Poncet

  3. CEA-DRT-LETI/DTS, F-38054, Grenoble cedex 09, France

    P. Holliger

Authors
  1. A. Pakfar
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  2. P. Holliger
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  3. A. Poncet
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  4. C. Fellous
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  5. D. Dutartre
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  6. T. Schwartzmann
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  7. H. Jaouen
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Pakfar, A. et al. (2004). Modeling dopant diffusion in SiGe and SiGeC layers. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_11

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_11

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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