Abstract
The conduction band in silicon consists of six equivalent valleys with their energy minima located close to the corresponding X-points of the first Brillouin zone. Within the usually used parabolic approximation (.1) each valley is characterized by two transversal and one longitudinal effective mass(7). At higher energy a non-parabolic isotropic correction must be included to reproduce the density of states correctly(76).
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Sverdlov, V. (2011). Strain Effects on the Conduction Band of Silicon. In: Strain-Induced Effects in Advanced MOSFETs. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0382-1_9
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