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Strain-Induced Effects in Advanced MOSFETs

  • Viktor┬áSverdlov

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Viktor Sverdlov
    Pages 1-3
  3. Viktor Sverdlov
    Pages 23-34
  4. Viktor Sverdlov
    Pages 35-44
  5. Viktor Sverdlov
    Pages 45-62
  6. Viktor Sverdlov
    Pages 91-103
  7. Viktor Sverdlov
    Pages 105-121
  8. Viktor Sverdlov
    Pages 131-167
  9. Back Matter
    Pages 239-252

About this book

Introduction

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given

Keywords

semiconductor devices strain technique transport modeling

Authors and affiliations

  • Viktor┬áSverdlov
    • 1
  1. 1., Institute for MicroelectronicsTechnical University ViennaViennaAustria

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-7091-0382-1
  • Copyright Information Springer-Verlag/Wien 2011
  • Publisher Name Springer, Vienna
  • eBook Packages Engineering
  • Print ISBN 978-3-7091-0381-4
  • Online ISBN 978-3-7091-0382-1
  • Series Print ISSN 0179-0307
  • Buy this book on publisher's site
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