Abstract
The methods of computing the band structure considered in the previous chapter are intrinsically numerical. In some cases the analytical expressions for the band structure close to the extremum points are needed. The k⋅p method is based on the perturbative approach and allows to obtain the analytical band structure close to a chosen point provided the eigenenergies and eigenfunctions at this point are known.
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Sverdlov, V. (2011). Perturbative Methods for Band Structure Calculations in Silicon. In: Strain-Induced Effects in Advanced MOSFETs. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0382-1_6
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DOI: https://doi.org/10.1007/978-3-7091-0382-1_6
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