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Demands of Transport Modeling in Advanced MOSFETs

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Strain-Induced Effects in Advanced MOSFETs

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

Integrated circuits (IC) play a key role in modern digital information society. Superior computational performance is achieved by making transistor faster and assembling more and more elements on a chip, This is achieved by scaling the MOSFET size down. In the past decade the minimum feature size of transistor has been successfully reduced which allowed to double the number of transistors on a chip every second year. This trend is expected to continue in the next decade, as predicted and institutionalized by the International Technology Roadmap for Semiconductors(1) and supported by demonstration of MOSFETs with the gate length as short as 6nm(28).

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    Viktor Sverdlov

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Sverdlov, V. (2011). Demands of Transport Modeling in Advanced MOSFETs. In: Strain-Induced Effects in Advanced MOSFETs. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0382-1_12

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