Abstract
Strain and hybrid orientation techniques are among the most important concepts to increase the performance of modern MOSFETs. The reason for the mobility enhancement lies in the band structure modification caused by stress. Multi-gate FinFETs and ultra-thin silicon body-based Silicon-On-Insulator (SOI) FETs are considered as perfect candidates for the 22nm technology node and beyond. Modification of the subband structure of inversion channels is the reason for improved transport characteristics of strained devices. Strong size quantization leads to a formation of quasi-two-dimensional subbands in carrier systems within thin silicon films.
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References
Rideau, D., Feraille, M., Michaillat, M., Niquet, Y.M., Tavernier, C., Jaouen, H.: On the validity of the effective mass approximation and the Luttinger k⋅p model in fully depleted SOI MOSFETs. Solid State Electron. 53(4), 452–461 (2009)
Ando, T., Fowler, A.B., Stern, F.: Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54(2), 437–672 (1982)
Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H.: Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model: Part 2 efficient self-consistent numerical solution of the k⋅p Schrödinger equation. Solid State Electron. 54(2), 143–148 (2010)
Bir, G.L., Pikus, G.E.: Symmetry and strain-induced effects in semiconductors. Willey, NewYork - Toronto (1974)
Boykin, T.B., Klimeck, G., Oyafuso, F.: Valence band effective-mass expressions in the sp 3 d 5 s ∗ empirical tight-binding model applied to a Si and Ge parametrization. Phys. Rev. B 69(11), 115201 (2004)
Chen, J., Saraya, T., Hiramoto, T.: Experimental study on uniaxially stressed gate-all-around silicon nanowires nMOSFETs on (110) silicon-on-insulator. In: Semiconductor Device Research Symposium, 2009. ISDRS ’09. International, pp. 1–2 (2009)
Esseni, D., Palestri, P.: Fullbandbulk quantization analysis reveals a third valley in (001) silicon invesrion layers. IEEE Electron Device Lett. 24(5), 353–355 (2005)
Esseni, D., Palestri, P.: Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices. Phys. Rev. B 72(16), 165342 (2005)
Foreman, B.A.: First-principles envelope-function theory for lattice-matched semiconductor heterostructures. Phys. Rev. B 72(16), 165345 (2005)
Fowler, A.B., Fang, F.F., Howard, W.E., Stiles, P.J.: Magneto-oscillatory conductance in silicon surfaces. Phys. Rev. Lett. 16(20), 901–903 (1966)
Friesen, M., Chutia, S., Tahan, C., Coppersmith, S.N.: Valley splitting theory of SiGe/Si/SiGe quantum wells. Phys. Rev. B 75(11), 115318 (2007)
Goswami, S., Slinker, K.A., Friesen, M., McGuire, L.M., Truitt, J.L., Tahan, C., Klein, L.J., Chu, J.O., Mooney, P.M., vander Weide, D.W., Joynt, R., Coppersmith, S.N., Eriksson, M.A., Orellana, P.: Controllable valley splitting in silicon quantum devices. Nat. Phys. 3(8), 41–45 (2007)
Hensel, J.C., Hasegawa, H., Nakayama, M.: Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond. Phys. Rev. 138(1A), A225–A238 (1965)
Khrapai, V.S., Shashkin, A.A., Dolgopolov, V.T.: Strong enhancement of the valley splitting in a two-dimensional electron system in silicon. Phys. Rev. B 67(11), 113305 (2003)
Lai, K., Pan, W., Tsui, D.C., Lyon, S., Mühlberger, M., Schäffler, F.: Two-flux composite fermion series of the fractional quantum hall states in strained Si. Phys. Rev. Lett. 93(15), 156805 (2004)
Luttinger, J.M., Kohn, W.: Motion of electrons and holes in perturbed periodic fields. Phys. Rev. 97(4), 869–883 (1955)
Martinez, A., Kalna, K., Sushko, P., Shluger, A., Barker, J., Asenov, A.: Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: A DFT/NEGF study. Nanotechnology, IEEE Transactions 8(2), 159–166 (2009)
Ohkawa, F.J., Uemura, Y.: Theory of valley splitting in an n-channel (100) inversion layer of Si: I. Formulation by extended zone effective mass theory. J. Physical Soc. Japan 43(3), 907–916 (1977)
Ohkawa, F.J., Uemura, Y.: Theory of valley splitting in an n-channel (100) inversion layer of Si: II. Electric break through. J. Physical Soc. Japan 43(3), 917–924 (1977)
Rideau, D., Feraille, M., Ciampolini, L., Minondo, M., Tavernier, C., Jaouen, H., Ghetti, A.: Strained Si, Ge, and Si1−x Ge x alloys modeled with a first-principles-optimized full-zone k ⋅p method. Phys. Rev. B 74(19), 195208 (2006)
Rieger, M.M., Vogl, P.: Electronic-band parameters in strained Si1−x Ge x alloys on Si1−y Ge y substrates. Phys. Rev. B 48(19), 14,276–14,287 (1993)
Sham, L.J., Nakayama, M.: Effective-mass approximation in the presence of an interface. Phys. Rev. B 20(2), 734–747 (1979)
vander Steen, J.L., Esseni, D., Palestri, P., Selmi, L., Hueting, R.: Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations. IEEE Trans. Electron Devices 54(8), 1843–1851 (2007)
Stern, F., Howard, W.E.: Properties of semiconductor surface inversion layers in the electric quantum limit. Phys. Rev. 163(3), 816–835 (1967)
Sverdlov, V., Baumgartner, O., Selberherr, S.: Subband parameters in strained (110) silicon films from the Hensel-Hasegawa-Nakayama model of the conduction band. In: Semiconductor Device Research Symposium, 2009. ISDRS ’09. International, pp. 1–2 (2009)
Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S.: Thickness dependence of the effective masses in a strained thin silicon film. In: Proceeings of International Conference on Simulation of Semiconductor Processes and Devices, pp. 1–4 (2009)
Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S.: Two-band k ⋅p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility. Solid State Electron. 52, 1563–1568 (2008)
Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S.: Effects of shear strain on the conduction band in silicon: An efficient two-band k ⋅p theory. In: Proceedings of European Solid-State Device Research Conference, pp. 386–389 (2007)
Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S.: Current transport models for nanoscale semiconductor devices. Mater. Sci. Eng. R 58(6–7), 228–270 (2008)
Sverdlov, V.A., Selberherr, S.: Electron subband structure and controlled valley splitting in silicon thin-body SOI FETs: Two-band k ⋅p theory and beyond. Solid State Electron. 52(12), 1861–1866 (2008)
Takashina, K., Ono, Y., Fujiwara, A., Takahashi, Y., Hirayama, Y.: Valley polarization in Si(100) at zero magnetic field. Phys. Rev. Lett. 96(23), 236801 (2006) DOI10. 1103/PhysRevLett.96.236801
Uchida, K., Kinoshita, A., Saitoh, M.: Carrier transport in (110) nMOSFETs: Subband structure, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In: International Electron Devices Meeting, pp. 1019–1021 (2006)
Uchida, K., Krishnamohan, T., Saraswat, K.C., Nishi, Y.: Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In: International Electron Devices Meeting, pp. 129–132 (2005)
Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S.: The effect of general strain on band structure and electron mobility of silicon. IEEE Trans. Electron Devices 54(9), 2183–2190 (2007)
VASP: Vienna Ab-initio Simulation Program. Kresse, G., Hafner, J.: Phys. Rev. B 47(558), (1993); ibid. B 49(14251), (1994); Kresse, G., Fertmueller, J.: Phys. Rev. B 54(11169), (1996); Computs. Mat. Sci. 6(15), (1996)
van Wees, B.J., van Houten, H., Beenakker, C.W.J., Williamson, J.G., Kouwenhoven, L.P., vander Marel, D., Foxon, C.T.: Quantized conductance of point contacts in a two-dimensional electron gas. Phys. Rev. Lett. 60(9), 848–850 (1988)
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Sverdlov, V. (2011). Electron Subbands in Thin Silicon Films. In: Strain-Induced Effects in Advanced MOSFETs. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0382-1_11
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DOI: https://doi.org/10.1007/978-3-7091-0382-1_11
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