Abstract
The group II–VI materials include a number of technologically important systems ranging from IR detection materials (Hg\(_{1-\mathrm{x}}\)Cd\(_\mathrm{x}\)Te), to X-ray detectors (Cd\(_{1-\mathrm{x}}\)Zn\(_\mathrm{x}\)Te), and the versatile ZnO. With the advent of interest in magnetic semiconductors for possible spintronics application, doping the II–VI compounds with transition metals was seen as potential route to such materials. EXAFS and XANES have proven very useful in characterizing such materials. They can determine the location and valence of the dopants, and are sensitive to potential second phase formation. This chapter looks at the application of XAS methods to a variety of magnetically doped II–VI systems over the last 30 years.
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Heald, S.M. (2015). Magnetic Ions in Group II–VI Semiconductors. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_16
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DOI: https://doi.org/10.1007/978-3-662-44362-0_16
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