X-Ray Absorption Spectroscopy of Semiconductors

  • Claudia S. Schnohr
  • Mark C. Ridgway

Part of the Springer Series in Optical Sciences book series (SSOS, volume 190)

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Claudia S. Schnohr, Mark C. Ridgway
    Pages 1-26
  3. Crystalline Semiconductors

    1. Front Matter
      Pages 27-27
    2. Claudia S. Schnohr
      Pages 29-47
    3. Maria Katsikini
      Pages 49-76
    4. Federico Boscherini
      Pages 77-97
    5. Gianluca Ciatto
      Pages 99-125
    6. Paolo Fornasini
      Pages 127-142
  4. Disordered Semiconductors

    1. Front Matter
      Pages 143-143
    2. Mark C. Ridgway
      Pages 145-163
    3. Mark C. Ridgway
      Pages 165-186
    4. Andrea Di Cicco, Adriano Filipponi
      Pages 187-200
  5. Semiconductor Nanostructures

    1. Front Matter
      Pages 201-201
    2. Alexander V. Kolobov
      Pages 203-222
    3. Xuhui Sun, Tsun-Kong Sham
      Pages 223-246
    4. Alexander A. Guda, Mikhail A. Soldatov, Alexander V. Soldatov
      Pages 247-268
    5. Francesco d’Acapito
      Pages 269-286
  6. Magnetic Semiconductors

    1. Front Matter
      Pages 287-287
    2. Roberto Gunnella
      Pages 289-311
    3. Krystyna Lawniczak-Jablonska
      Pages 313-338

About this book

Introduction

X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Keywords

Amorphous Semiconductors Disordered Semiconductors Nanoparticles in Semiconductors Optical Properties of Semiconductors Porous Semiconductors Structural Properties of Semiconductors Vibrational Anisotropy Vibrational Properties of Semiconductors X-ray Absorption Spectroscopy XAS Book

Editors and affiliations

  • Claudia S. Schnohr
    • 1
  • Mark C. Ridgway
    • 2
  1. 1.Friedrich-Schiller-University Jena Institute of Solid State PhysicsJenaGermany
  2. 2.Department of Electronic Materials EngineeringThe Australian National UniversityCanberraAustralia

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-662-44362-0
  • Copyright Information Springer-Verlag Berlin Heidelberg 2015
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-662-44361-3
  • Online ISBN 978-3-662-44362-0
  • Series Print ISSN 0342-4111
  • Series Online ISSN 1556-1534
  • About this book
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