Abstract
The various techniques of growing epitaxial layers from the vapor phase can be divided roughly into two categories depending on whether the species are transported physically or chemically from the source to the substrate.
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References
K.F. Jensen: Transport Phenomena in Vapor Phase Epitaxy Reactors,in Ref. [4.1], Chap. 13
G.B. Stringfellow: Rep. Prog. Phys. 45, 469 (1982)
L.I. Maissel, R. Clang (eds.): Handbook of Thin Film Technology ( McGraw-Hill, New York 1970 )
M.A. Herman, H. Sitter: Molecular Beam Epitaxy - Fundamentals and Cur-rent Status, 2nd ed. ( Springer, Berlin 1996 )
H. Hertz: Ann. Phys. 17, 177 (1882)
M. Knudsen: Ann. Phys. (Leipzig) 47, 697 (1915)
I. Langmuir: Phys. Z. 14, 1273 (1913)
M. Knudsen: Ann. Phys. (Leipzig) 29, 179 (1909)
E. Rutner: in Condensation and Evaporation of Solids, ed. by E. Rutner, P. Goldfinger, J.P. Hirth ( Gordon and Breach, New York 1964 ), p. 149
R.W. Berry, P.M. Hall, M.T. Harris: Thin Film Technology (Van Nostrand, Reinhold, New York 1968 )
G.K. Wehner, G.S. Anderson: The Nature of Physical Sputtering,in Ref. [6.3], Chap. 3
L. Maissel: Application of Sputtering to the Deposition of Films,in Ref. [6.3], Chap. 4
W. Kern, K.K. Schuegraf: Deposition Technologies and Applications — Intro-duction and Overview,in Handbook of Thin Film Deposition Processes and Techniques,ed. by K.K. Schuegraf (Noyes Publ., Park Ridge, New Jersey 1988), Chap. 1
M.H. Francombe: Growth of Epitaxial Films by Sputtering, in Epitaxial Growth, ed. by J.W. Matthews (Academic Press, New York 1975), Part A, Sect. 2. 5
M. Konuma: Film Deposition by Plasma Techniques (Springer, Berlin, Heidelberg 1992 )
G.S. Anderson, W.N. Mayer, G.K. Wehner: J. Appl. Phys. 33, 2991 (1962)
J.A. Thornton: J. Vac. Sci. Technol. A 4, 3059 (1986)
D.B. Chrisey, G.K. Hubler (eds.): Pulsed Laser Deposition of Thin Films (J. Wiley and Sons, New York 1994 )
R. Kelly, A. Miotello: Mechanisms of Pulsed Laser Sputtering,in Ref. [6.18], Chap. 3
L.C. Chen: Particulates Generated by Pulsed Laser Ablation,in Ref. [6.18], Chap. 6
O. Auciello: Pulsed Laser Ablation-Deposition of Multicomponent Oxide Thin Films: Basic Laser Ablation and Deposition Processes and Influence on Film Characteristics,in Ref. [4.1], Chap. 9
A. Inam, X.D. Wu, T. Venkatesan, S.B. Ogale, C.C. Chang, D. Dijkkamp: Appl. Phys. Lett. 51, 1112 (1987)
S.R. Foltyn, R.E. Muenchausen, R.C. Estler, E. Petersen, W.B. Hutchi-son, K.C. Ott, N.S. Nogar, K.M. Hubbard: in Laser Ablation for Materials Synthesis, Mater. Res. Soc. Symp. Proc. No 191, ed. by D.C. Payne, J.C. Bravman (Pittsburg, PA 1990 ), p. 205
H. Watanabe: Halogen Transport Epitaxy,in Ref. [4.1], Chap. 1
A.E. Nikolaev, Yu.V. Melnik, N.I. Kuznetsov, A.M. Streldink, A.P. Ko-varsky, R.V. Vassilevski, V.A. Dmitriev: GaN p-n Structures Grown by Hydride Vapor Phase Epitaxy, in Nitride Semiconductors, ed. by F.A. Ponce, S.P. Den Baars, B.K. Meyer, S. Nakamura, S. Strite (Mater. Res. Soc. Symp. Proc., Warrendale, Proc., 1998 ), 482, p. 251
D.T.J. Hurle (ed.): Thin Films and Epitaxy,in: Handbook of Crystal Growth (Elsevier, Amsterdam 1994), Vol. 3, Parts A and B
G.B. Secrest, W.W. Boyd, D.W. Show: J. Cryst. Growth 10, 251 (1971)
D.I. Fotiadis, M. Boekholt, K.F. Jensen, W. Richter: J. Cryst. Growth 100, 577 (1990)
R.B. Bird, W.E. Stewart, E. Lightfoot: Transport Phenomena ( Wiley, New York, 1962 )
K.F. Jensen: in Ref. [4.1]
H. Moffat, K.F. Jensen: J. Cryst. Growth 77, 108 (1986)
H. Schlichting: Boundary Layer Theory ( McGraw-Hill, New York, 1968 )
D.W. Kisker, D.R. McKenna, K.F. Jensen: ater. Lett. 6, 123 (1988)
O.C. Zienkiewicz R.L. Taylor: The Finite Element Method, 4th Edition ( McGraw-Hill, New York, 1989 )
R. Huyakorn, C. Taylor, R. Lee, P. Gresho: Computers and Fluids 6, 25 (1978)
K.F. Jensen, D.I. Fotiadis, D.R. McKenna, H.K. Moffat: Am. Chem. Soc. Symp. Ser. 353, 353 (1987)
M. Koppitz, O. Vestavik, W. Pletschen, A. Mircea, M. Heyen, W. Richter: J. Cryst. Growth 68, 6 (1984)
H. Hardtdegen et al.: in Ref. [8.3], p. 211
M.R. Leys, C.V. Opdorp, M.P.A. Viegers, H.J.T. van der Mheen: J. Cryst. Growth 68, 431 (1984)
N. Puetz, G. Hiller, A.J. Springthorpe: J. Electron. Mater. 17, 381 (1988)
L. Stock, W. Richter: J. Cryst. Growth 77, 144 (1986)
W. Richter, L. Hünermann: Chemtronics 2, 175 (1987)
D.E. Rosner: Transport Processes in Chemically Reacting Flow Systems ( Butterworth, Stoneham, MA, 1986 )
G.B. Stringfellow: Organometallic Vapor Phase Epitaxy - Theory and Prac-tice ( Academic Press, New York 1990 )
T.R. Scott, G. King, J.M. Wilson: UK Patent 778.383. 8 (1954)
W. Miederer, G. Ziegler, R. Dotzer: German Patent 1.176. 102 (1962)
W. Miederer, G. Ziegler, R. Dotzer: US Patent 3, 226, 270 (1963)
H.M. Manasevit, W.I. Simpson: J. Electrochem. Soc. 116, 1725 (1969)
S. Fairweather: III-Vs Rev. 11, no. 3, 18 (1998)
C.H.L. Goodman, M. Pessa: J. Appl. Phys. 60, R65 (1986)
T. Suntola, J. Antson: Finnish Patent 52359 (1974) and US Patent 4058430 (1977) to Lohja Corp. Finland
T. Suntola: Atomic Layer Epitaxy,in Ref. [4.1], Chap. 14
S. Bedair (ed): Atomic Layer Epitaxy, ( Elsevier, Amsterdam, 1992 )
T. Suntola: Mater. Sci. Rep. 4, 261 (1989)
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Herman, M.A., Richter, W., Sitter, H. (2004). Vapor Phase Epitaxy. In: Epitaxy. Springer Series in MATERIALS SCIENCE, vol 62. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-07064-2_6
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