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DRAM Circuits

  • Chapter
VLSI Memory Chip Design

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 5))

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Abstract

The intensive research and development (R&D) directed toward DRAMs has rapidly increased memory-chip capacity by more than six orders (1 Kb to 4 Gb) at the R&D level over the past 30 years [3.1] since the advent of DRAMs in the early 1970s. As a result, 64–256 Mb DRAMs are now at the volume-production level. Such rapid progress in DRAM density has led to their playing an important role in enhancing the performance and reducing the cost of electronic systems such as large computers, workstations, personal computers (PCs), and so on. The quadrupling of memory capacity, as shown in Fig. 3.1, through high-density technology has contributed to this progress. High-performance circuits aimed at higher speed and lower dissipation, which have been achieved in past despite the ever-increasing chip area with increased memory capacity (Fig. 3.1), have also benefited system designers.

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  1. Central Research Laboratory, Hitachi Ltd., 1-280, Higashi-Koigakubo, Kokubunji-shi, Tokyo, 185-8601, Japan

    Dr. Kiyoo Itoh

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© 2001 Springer-Verlag Berlin Heidelberg

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Itoh, K. (2001). DRAM Circuits. In: VLSI Memory Chip Design. Springer Series in Advanced Microelectronics, vol 5. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-04478-0_3

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  • DOI: https://doi.org/10.1007/978-3-662-04478-0_3

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-08736-3

  • Online ISBN: 978-3-662-04478-0

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