Advertisement

Energy Shifts, Intensity Minima, and Line Splitting in the Optical Recombination of Electrons in the Integer and Fractional Quantum Hall Regimes

  • B. B. Goldberg
  • D. Heiman
  • A. Pinczuk
  • L. Pfeiffer
  • K. West
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Abstract

Energy shifts in the electron-hole recombination energy and minima in the peak intensity at integer and fractional filling factors occur in the luminescence from ultra high mobility GaAs single quantum wells and heterojunctions. At Landau and spin gaps the magnetic field regions of the energy shifts and intensity minima broaden as the temperature is reduced, in consort with the transport Hall resistance. This relates the optical anomalies directly to the position of the Fermi energy in localized transport states. In the fractional quantum Hall regime a sharp intensity minimum and peak shift is observed at v = 2/3, while higher-field fractions are characterized by a splitting in the luminescence, with the higher-energy component dominant at higher fields. The response of the 2D electron gas to the perturbation of the hole is an important consideration, and is studied by varying the quantum well width, whence it is found that correlation effects are reduced relative to vertex corrections as the well width is increased.

Keywords

Filling Factor Energy Shift Vertex Correction Fractional Quantum Hall Effect Magnetic Field Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    D.C. Tsui, H.L. Störmer, and A.C. Gossard, Phys. Rev. Lett. 48, 1559 (1982).CrossRefGoogle Scholar
  2. R.B. Laughlin, Phys. Rev. Lett. 50, 1395 (1983).CrossRefGoogle Scholar
  3. 2.
    T. Ando and Y. Murayama, J. Phys. Soc. Jpn. 54, 1519 (1985).CrossRefGoogle Scholar
  4. S. Das Sarma and X.C. Xie, Phys. Rev. Lett. 61, 738 (1988).CrossRefGoogle Scholar
  5. 3.
    B.B. Goldberg, D. Heiman, A. Pinczuk, C.W. Tu, A.C. Gossard and J.H. English, Surf. Sci. 196, 209 (1988).CrossRefGoogle Scholar
  6. D. Heiman, B.B. Goldberg, A. Pinczuk, C.W. Tu, A.C. Gossard and J.H. English, Phys. Rev. Lett. 61, 605, (1988).Google Scholar
  7. 4.
    I.V. Kukushkin and V.B. Timofeev, Pis’ma Zh. Eksp. Teor. Fiz. 44, 179 (1986) [JETP Lett. 44, 228 (1986)].Google Scholar
  8. I.V. Kukushkin and V.B. Timofeev, Surf. Sci. 196, 196 (1988).CrossRefGoogle Scholar
  9. 5.
    B. B. Goldberg, D. Heiman, A. Pinczuk, L. Pfeiffer, and K. West, to appear in Phys. Rev. Lett.; A. J. Turberfield, S. R. Haynes, P. A. Wright, R. A. Ford, R. G. Clark, J. F. Ryan, J. J. Harris, and C. T. Foxon, to appear in Phys. Rev. Lett.; I. V. Kukushkin, A. S. Plaut, K. v. Klitzing, K. Ploog, H. Buhmann, W. Joss, G. Martinez, and V. B. Timofeev, 20th ICPS.Google Scholar
  10. 6.
    B.B. Goldberg, D. Heiman, M.J. Graf, D.A. Broido, A. Pinczuk, C.W. Tu, J.H. English, and A.C. Gossard, Phys. Rev. B 38, 10131 (1988).Google Scholar
  11. 7.
    G.E.W. Bauer, Phys. Rev. Lett. 64, 60 (1990).CrossRefGoogle Scholar
  12. 8.
    C.H. Perry, J.M. Worlock, M.C. Smith, and A. Petrou, in High Magnetic Fields in Semiconductor Physics, ed. by G. Landwehr (Springer-Verlag, Berlin, 1987), p. 202; M.S. Skolnick, K.J. Nash, S.J. Bass, P.E. Simmonds, and M.J. Kane, Sol. State Comm. 67, 637 (1988).Google Scholar
  13. H. Yoshimura and H. Sakaki, Phys. Rev. B 39, 13024 (1989).Google Scholar
  14. 9.
    Excited-state recombination in pseudomorphic InGaAs also appears to show a correlation with magnetotransport; W. Chen, M. Fritze, A. V. Nurmikko, D. Ackley, C. Colvard, and N. Nouri, Phys. Rev. Lett. 62, 1000 (1990).Google Scholar
  15. 10.
    B. B. Goldberg, D. Heiman, A. Pinczuk, Phys. Rev. Lett. 10, 1102 (1989).CrossRefGoogle Scholar
  16. 11.
    T. Uenoyama and L.J. Sham, Phys. Rev. B 39, 11044 (1989).Google Scholar
  17. S. Katayama and T. Ando, Sol. State Comm. 70, 97 (1989).CrossRefGoogle Scholar
  18. 12.
    S. Schmitt-Rink, D.S. Chemla and D.A.B. Miller, Adv. in Phys. 38, 89 (1989).CrossRefGoogle Scholar
  19. 13.
    J. K. Jain, Phys. Rev. Lett. 63 199, (1989).CrossRefGoogle Scholar
  20. 14.
    M. Dahl, et al. to be published.Google Scholar
  21. 15.
    Yu.A. Bychkov and É.I. Rashba, Zh. Eksp. Teor. Fiz. 96, 757 1989; [Sov. Phys. JETP 69, 430 1989].Google Scholar
  22. 16.
    R. L. Willett, H. Störmer, D. Tsui, L. Pfeiffer, K. West, and K. Baldwin, Phys. Rev. B 38 7881 (1989).Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1992

Authors and Affiliations

  • B. B. Goldberg
    • 1
    • 2
  • D. Heiman
    • 3
  • A. Pinczuk
    • 4
  • L. Pfeiffer
    • 4
  • K. West
    • 4
  1. 1.MIT Francis Bitter National Magnet LaboratoryCambridgeUSA
  2. 2.Physics DepartmentBoston UniversityBostonUSA
  3. 3.Francis Bitter National Magnet LaboratoryUSA
  4. 4.AT&T Bell LaboratoriesMurray HillUSA

Personalised recommendations