High Magnetic Fields in Semiconductor Physics III

Quantum Hall Effect, Transport and Optics

  • Gottfried Landwehr

Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 101)

Table of contents

  1. Front Matter
    Pages I-XV
  2. Integer Quantum Hall Effect, Localization

    1. Front Matter
      Pages 1-1
    2. A. MacKinnon
      Pages 27-37
    3. S. Koch, R. J. Haug, K. von Klitzing, K. Ploog
      Pages 38-41
    4. M. D’Iorio, V. M. Pudalov, S. M. Semenchinsky
      Pages 56-59
    5. Y. Ono, T. Ohtsuki, B. Kramer
      Pages 60-69
    6. O. Viehweger, K. B. Efetov
      Pages 80-83
    7. G. Müller, D. Weiss, S. Koch, K. von Klitzing, H. Nickel, W. Schlapp et al.
      Pages 119-122
    8. T. Ohtsuki, Y. Ono
      Pages 123-126

About these proceedings


High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.


High magnetic fields Quantum Hall Effect Semiconductors Two-dimensional systems electronic structure semiconductor superlattices transport

Editors and affiliations

  • Gottfried Landwehr
    • 1
  1. 1.Physikalisches InstitutUniversität WürzburgWürzburgFed. Rep. of Germany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-84408-9
  • Copyright Information Springer-Verlag Berlin Heidelberg 1992
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-84410-2
  • Online ISBN 978-3-642-84408-9
  • Series Print ISSN 0171-1873
  • About this book
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