Skip to main content
SpringerLink
Log in
Book cover

High Magnetic Fields in Semiconductor Physics III

Quantum Hall Effect, Transport and Optics

  • Conference proceedings
  • © 1992

Overview

Editors:
  1. Gottfried Landwehr

    1. Physikalisches Institut, Universität Würzburg, Würzburg, Fed. Rep. of Germany

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

Part of the book series: Springer Series in Solid-State Sciences (SSSOL, volume 101)

This is a preview of subscription content, log in via an institution to check access.

Access this book

Log in via an institution
eBook USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

Licence this eBook for your library

Institutional subscriptions

Table of contents (102 papers)

  1. Front Matter

    Pages I-XV
    Download chapter PDF

  2. Integer Quantum Hall Effect, Localization

    1. Front Matter

      Pages 1-1
      Download chapter PDF

    2. Ten Years of the Quantum Hall Effect: Development and Present State of the Theory

      • J. Hajdu
      Pages 3-16

    3. An Overview of the Numerical Studies of the Quantum Hall Effect

      • H. Aoki
      Pages 17-26

    4. Scaling and the Quantum Hall Effect

      • A. MacKinnon
      Pages 27-37

    5. Scaling Behaviour of Doped AlGaAs/GaAs Heterostructures in the Quantum Hall Regime

      • S. Koch, R. J. Haug, K. von Klitzing, K. Ploog
      Pages 38-41

    6. Magneto-Capacitance in Two-Dimensional Electronic Systems in AlxGa1−xAs/GaAs Heterostructures Under the Influence of Ionized Impurities

      • J. Richter, H. Sigg, K. von Klitzing, K. Ploog
      Pages 42-45

    7. Localization in the Quantum Hall Effect

      • S. Kawaji
      Pages 46-55

    8. Full Localization of the 2D Electron Gas in Si MOSFETs at 30 mK and at High Magnetic Fields

      • M. D’Iorio, V. M. Pudalov, S. M. Semenchinsky
      Pages 56-59

    9. Electronic States in 2D Random Systems in High Magnetic Fields

      • Y. Ono, T. Ohtsuki, B. Kramer
      Pages 60-69

    10. Localization and Scaling in the Quantum Hall Regime: Dependence on Landau Level Index and Correlation Length

      • B. Huckestein, B. Kramer
      Pages 70-73

    11. Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D Electron Gas

      • M. D’Iorio, V. M. Pudalov, S. G. Semenchinsky
      Pages 74-79

    12. The Frequency-Dependent Deformation of the Hall Plateaus

      • O. Viehweger, K. B. Efetov
      Pages 80-83

    13. Multifractal Eigenstates in the Centre of Disorder Broadened Landau Bands

      • B. Huckestein, L. Schweitzer
      Pages 84-88

    14. Exact Widths and Tails for Landau Levels Broadened by a Random Potential with an Arbitrary Correlation Length

      • K. Broderix, N. Heldt, H. Leschke
      Pages 89-93

    15. Scattering Mechanism in the Integer Quantum Hall Effect

      • J. Riess
      Pages 94-104

    16. Transport Theory of the Quantized Hall Effect

      • M. Büttiker
      Pages 105-118

    17. Edge Channel Transport Under Quantum Hall Conditions

      • G. Müller, D. Weiss, S. Koch, K. von Klitzing, H. Nickel, W. Schlapp et al.
      Pages 119-122

    18. Effect of Disorder and Gate Barrier on Edge States

      • T. Ohtsuki, Y. Ono
      Pages 123-126

    19. Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at High Magnetic Fields

      • S. I. Dorozhkin, S. Koch, K. von Klitzing, G. Dorda
      Pages 127-130
Back to top

Keywords

About this book

High magnetic fields have, for a long time, been an important tool in the investigation of the electronic structure of semiconductors. In recent yearsstudies of heterostructures and superlattices have predominated, and this emphasis is reflected in these proceedings. The contributions concentrate on experiments using transport and optical methods, but recent theoretical developments are also covered. Special attention is paid to the quantum Hall effect, including the problem of edge currents, the influence of contacts, and Wigner condensation in the fractional quantum Hall effect regime. The 27 invited contributions by renowned expertsprovide an excellent survey of the field that is complemented by numerous contributed papers.

Editors and Affiliations

  • Physikalisches Institut, Universität Würzburg, Würzburg, Fed. Rep. of Germany

    Gottfried Landwehr

Bibliographic Information

Publish with us

Policies and ethics

Back to top

Search

Navigation