Abstract
It is experimentally shown that the magnetoresistance Rxx (v) at noninteger filling factors v in Si MOSFETs and GaAs/AlGaAs heterostructures with large aspect ratio is equal to the difference of the Hall resistances: δRxy =h/e2 v 1 −Rxy (v), where v 1 is an integer corresponding to the nearest well developed quantum Hall state. Our model of nondissipative current flow near the sample edges, which dominates at low temperature and low currents, explains our results and predicts the Hall resistance difference to be an upper limit for Rxx independent of the sample size.
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References
K. von Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 44, 479 (1980).
K. von Klitzing, G. Ebert, N. Kleinmichel, H. Obloh, G. Dorda, and G. Weimann, Proc. of 17th Int. Conf. Physics of Semiconductors, San Francisco (1984), Ed. J.D. Chadi, W.A. Harrison, Springer Verlag, New York, p. 271.
B.E. Kane, D.C. Tsui, and G. Weimann, Phys. Rev. Lett. 59, 1353 (1987).
R.J. Haug and K. von Klitzing, Europhys. Lett. 10, 489 (1989).
M. Büttiker, Phys. Rev. B 38, 9375 (1988).
P.L. McEuen, A. Szafer, CA. Richter, B.W. Alphenaar, J.K. Jain, A.D. Stone, R.G. Wheeler, and R.N. Sacks, Phys. Rev. Lett. 64, 2062 (1990).
D.A. Syphers, and P.J. Stiles, Phys. Rev. B 32, 6620 (1985).
G. Ebert, K. von Klitzing, and G. Weimann, J. Phys. C 18, L257 (1985).
H.Z. Zheng, D.C. Tsui, and Albert M. Chang, Phys. Rev. B 32, 5506 (1985).
B.J. van Wees, E.M.H. Willems, L.P. Kouwenhoven, C.J.P.M. Harmans, J.G. Williamson, C.T. Foxon, and J.J. Harris, Phys. Rev. B 39, 8066 (1989).
T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
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© 1992 Springer-Verlag Berlin Heidelberg
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Dorozhkin, S.I., Koch, S., von Klitzing, K., Dorda, G. (1992). Effect of Nondissipative Edge Currents on the Magnetoresistance of a Two-Dimensional Electron Gas at High Magnetic Fields. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_18
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DOI: https://doi.org/10.1007/978-3-642-84408-9_18
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