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Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D Electron Gas

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High Magnetic Fields in Semiconductor Physics III

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 101))

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Abstract

We report on the observation of a new phenomenon: a sequence of magnetic field induced transitions between well defined Quantum Hall effect states, with a Hall resistance quantized as h/e2 and a vanishingly small longitudinal resistance, and insulator states with longitudinal resistance exceeding 2 GΩ. This phenomenon is observed in extremely high mobility Si MOSFETs, in a range of electron concentrations corresponding to a dilute 2D electron gas in or near an activated electronic transport regime. We attribute this effect to a modulation of the metal-insulator transition by the Quantum Hall effect.

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Author information

Authors and Affiliations

  1. Division of Physics, National Research Council of Canada, Ottawa, K1A 0R6, Canada

    M. D’Iorio

  2. Institute for the Metrological Service, Andreevskaya nab. 2, SU-117334, Moscow, USSR

    V. M. Pudalov & S. G. Semenchinsky

Authors
  1. M. D’Iorio
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  2. V. M. Pudalov
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  3. S. G. Semenchinsky
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Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Würzburg, Am Hubland, W-8700, Würzburg, Fed. Rep. of Germany

    Gottfried Landwehr

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© 1992 Springer-Verlag Berlin Heidelberg

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D’Iorio, M., Pudalov, V.M., Semenchinsky, S.G. (1992). Magnetic Field Induced Transitions Between Quantized Hall and Insulator States in a Dilute 2D Electron Gas. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics III. Springer Series in Solid-State Sciences, vol 101. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84408-9_10

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  • DOI: https://doi.org/10.1007/978-3-642-84408-9_10

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84410-2

  • Online ISBN: 978-3-642-84408-9

  • eBook Packages: Springer Book Archive

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