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Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam

  • H. Frenzel
  • E. Frenzel
  • P. Davies
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 44)

Abstract

A normal incident ion beam is advantageous to obtain highest possible ionisation. It has been previously [1] demonstrated that in case of a SiO2 layer on Si the Si is completely saturated with oxygen at incident O2 ion beam to form SiO2. This leads to the same chemical matrix and differences in ionisation yield need not be corrected.

Keywords

Depth Resolution Chemical Matrix Secondary Electron Microscopy Angle Behavior Tantalum Silicide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    H. Frenzel et al, Proceedings of SIMS IV, Springer Verlag, Springer Series in Physics, 36, 241 (1984)CrossRefGoogle Scholar
  2. 2.
    H. Frenzel, PhD thesis, Technical University Aachen, FRG (1980)Google Scholar
  3. 3.
    C. McGee and R.E. Honig, Surf. Interf. Anal. 4, 35 (1982)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • H. Frenzel
    • 1
  • E. Frenzel
    • 2
  • P. Davies
    • 3
  1. 1.Atomika Technische Physik GmbHMünchenGermany
  2. 2.Institut für FestkörpertechnologieMünchenGermany
  3. 3.Intel CorporationSanta ClaraUSA

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