Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam
A normal incident ion beam is advantageous to obtain highest possible ionisation. It has been previously  demonstrated that in case of a SiO2 layer on Si the Si is completely saturated with oxygen at incident O2 ion beam to form SiO2. This leads to the same chemical matrix and differences in ionisation yield need not be corrected.
KeywordsDepth Resolution Chemical Matrix Secondary Electron Microscopy Angle Behavior Tantalum Silicide
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