Skip to main content
SpringerLink
Log in

Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam

  • Conference paper
Secondary Ion Mass Spectrometry SIMS V

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 44))

Abstract

A normal incident ion beam is advantageous to obtain highest possible ionisation. It has been previously [1] demonstrated that in case of a SiO2 layer on Si the Si is completely saturated with oxygen at incident O2 ion beam to form SiO2. This leads to the same chemical matrix and differences in ionisation yield need not be corrected.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. H. Frenzel et al, Proceedings of SIMS IV, Springer Verlag, Springer Series in Physics, 36, 241 (1984)

    Article  Google Scholar 

  2. H. Frenzel, PhD thesis, Technical University Aachen, FRG (1980)

    Google Scholar 

  3. C. McGee and R.E. Honig, Surf. Interf. Anal. 4, 35 (1982)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Atomika Technische Physik GmbH, D-8000, München, Germany

    H. Frenzel

  2. Institut für Festkörpertechnologie, D-8000, München, Germany

    E. Frenzel

  3. Intel Corporation, Santa Clara, USA

    P. Davies

Authors
  1. H. Frenzel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. E. Frenzel
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. P. Davies
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Physikalisches Institut, Universität Münster, Domagkstraße 75, D-4400, Münster, Fed. Rep. of Germany

    Alfred Benninghoven

  2. Chemistry Division, Naval Research Laboratory, 20375, Washington, DC, USA

    Richard J. Colton

  3. Center for Analytical Chemistry, National Bureau of Standards, 20899, Gaithersburg, MD, USA

    David S. Simons

  4. Philips Research Laboratories, NL-Eindhoven, The Netherlands

    Helmut W. Werner

Rights and permissions

Reprints and permissions

Copyright information

© 1986 Springer-Verlag Berlin Heidelberg

About this paper

Cite this paper

Frenzel, H., Frenzel, E., Davies, P. (1986). Dependence of Sputter Induced Broadening on the Incident Angle of the Primary Ion Beam. In: Benninghoven, A., Colton, R.J., Simons, D.S., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS V. Springer Series in Chemical Physics, vol 44. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82724-2_83

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-82724-2_83

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82726-6

  • Online ISBN: 978-3-642-82724-2

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation