Abstract
Nanocrystalline silicon with grain size of less than 10nm has been prepared by digital chemical vapor deposition method. We have clarified that hydrogen radicals play very important role in both nucleation and crystallization of nc-Si. Hydrogen radicals are also useful for the selective etching of hydrogenated amorphous silicon surrounding nc-Si for the formation of potential barrier for quantum dot structure. Methods for the control of two-dimensional position of nc-Si are also discussed.
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Oda, S., Otobe, M. (1994). Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition. In: Nanostructures and Quantum Effects. Springer Series in Materials Science , vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-79232-8_36
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DOI: https://doi.org/10.1007/978-3-642-79232-8_36
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-79234-2
Online ISBN: 978-3-642-79232-8
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