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Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition

  • S. Oda
  • M. Otobe
Conference paper
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 31)

Abstract

Nanocrystalline silicon with grain size of less than 10nm has been prepared by digital chemical vapor deposition method. We have clarified that hydrogen radicals play very important role in both nucleation and crystallization of nc-Si. Hydrogen radicals are also useful for the selective etching of hydrogenated amorphous silicon surrounding nc-Si for the formation of potential barrier for quantum dot structure. Methods for the control of two-dimensional position of nc-Si are also discussed.

Keywords

Hydrogen Plasma Selective Etching Hydrogen Radical Increase Annealing Time Very High Frequency 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1994

Authors and Affiliations

  • S. Oda
    • 1
    • 2
  • M. Otobe
    • 1
  1. 1.Department of Physical ElectronicsTokyo Institute of TechnologyMeguro-ku, Tokyo 152Japan
  2. 2.PRESTO “Structure and Functional Property”JRDCMeguro-ku, Tokyo 152Japan

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