Abstract
X-ray diffraction is a powerful characterization technique for providing very detailed structural information on epitaxal structures. It is non-destructive, probes large areas of the sample to a depth on the order of 10 μm, yet at the same time provides information on atomic scale. Its applications to the GaInAsP/InP material system range from the determination of the lattice constant of single epitaxial layers, important in this system which is not naturally lattice matched to the substrate, to studies of the structural parameters of superlattices and binary-to-ternary interfaces.
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Panish, M.B., Temkin, H. (1993). Characterization of Heterostructures by High Resolution X-ray Diffraction. In: Gas Source Molecular Beam Epitaxy. Springer Series in Materials Science, vol 26. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-78127-8_6
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DOI: https://doi.org/10.1007/978-3-642-78127-8_6
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