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Gas Source Molecular Beam Epitaxy

Growth and Properties of Phosphorus Containing III-V Heterostructures

  • Book
  • © 1993

Overview

Authors:
  1. Morton B. Panish

    1. AT&T Bell Laboratories, Murray Hill, USA

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    You can also search for this author in PubMed   Google Scholar

  2. Henryk Temkin

    1. AT&T Bell Laboratories, Murray Hill, USA

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    You can also search for this author in PubMed   Google Scholar

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 26)

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Table of contents (11 chapters)

  1. Front Matter

    Pages I-XIV
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  2. Introduction

    • Morton B. Panish, Henryk Temkin
    Pages 1-13

  3. Chemistry

    • Morton B. Panish, Henryk Temkin
    Pages 14-54

  4. The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy

    • Morton B. Panish, Henryk Temkin
    Pages 55-77

  5. Molecular Beam Epitaxy Systems and Procedures

    • Morton B. Panish, Henryk Temkin
    Pages 78-117

  6. Doping During GSMBE

    • Morton B. Panish, Henryk Temkin
    Pages 118-172

  7. Characterization of Heterostructures by High Resolution X-ray Diffraction

    • Morton B. Panish, Henryk Temkin
    Pages 173-199

  8. Optical Properties of Quantum Wells

    • Morton B. Panish, Henryk Temkin
    Pages 200-250

  9. Carrier Transport Across Quantum Wells and Superlattices

    • Morton B. Panish, Henryk Temkin
    Pages 251-278

  10. Bipolar Transistors

    • Morton B. Panish, Henryk Temkin
    Pages 279-321

  11. Optoelectronic Devices

    • Morton B. Panish, Henryk Temkin
    Pages 322-359

  12. In-Situ Processing and Selective Area Epitaxy

    • Morton B. Panish, Henryk Temkin
    Pages 360-398

  13. Back Matter

    Pages 399-428
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Keywords

Authors and Affiliations

  • AT&T Bell Laboratories, Murray Hill, USA

    Morton B. Panish, Henryk Temkin

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