Abstract
In high-sensitivity depth profiling techniques like SIMS, AES, ESCA, ISS, etc., the continuous measurement of sputter rate or sputtered depth during sputtering becomes increasingly important. Established on-line techniques for sputter rate measurements based on optical and electro-mechanical sensing are less suited because of the extensive calibration and sample preparation, the low depth resolution and the restricted availability with respect to different material. In this paper a simple electro-optical technique is used as an on-line method for measuring the sputtered depth during SIMS/AES depth profiling. Its optical arrangement is shown schematically in Fig. 1.
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References
G. Makosch, B. Solf, IBM pat. appl., disclosure no. 877197, doc. no. 2851750.
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© 1979 Springer-Verlag New York
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Kempf, J. (1979). On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_29
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DOI: https://doi.org/10.1007/978-3-642-61871-0_29
Publisher Name: Springer, Berlin, Heidelberg
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