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Ion Beam Studies of Silicon Oxidation and Oxynitridation

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Fundamental Aspects of Silicon Oxidation

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 46))

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Abstract

In this chapter we discuss the use of ion beam methods to examine silicon oxidation and oxynitridation. Ion beam analysis, although usually performed ex-situ following growth, offers precise information about the composition and growth mechanism of films. We limit our work to an examination of methods involving ion beam energies E ≥ 50 keV. We discuss Rutherford backscattering spectroscopy (RBS), elastic recoil detection (ERD), medium energy ion scattering (MEIS), nuclear reaction analysis (NRA), and nuclear resonance profiling (NRP). SIMS and other lower energy methods are not reviewed; instead the reader is referred to reviews elsewhere [1,2]. For many isotopes SIMS has superior detection limits than RBS and NRA. It provides very high sensitivity (in some cases on the order of 0.001 atomic %) and can be performed rapidly [3,4]. For many of the applications discussed below, however, conventional SIMS techniques do not offer the depth resolution needed due to matrix effects and ion beam mixing.

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Authors
  1. W. H. Schulte
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  2. T. Gustafsson
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  3. E. Garfunkel
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  4. I. J. R. Baumvol
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  5. E. P. Gusev
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Editors and Affiliations

  1. Agere Systems, Electronic and Photonic Materials Physics Research, 600-700 Mountain Avenue, Murray Hill, NJ, 07974-0636, USA

    Yves J. Chabal

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Schulte, W.H., Gustafsson, T., Garfunkel, E., Baumvol, I.J.R., Gusev, E.P. (2001). Ion Beam Studies of Silicon Oxidation and Oxynitridation. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_9

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