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Fundamental Aspects of Silicon Oxidation

  • Book
  • © 2001

Overview

Editors:
  1. Yves J. Chabal

    1. Agere Systems, Electronic and Photonic Materials Physics Research, Murray Hill, USA

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  • This is the only book that addresses fundamental issues in silicon oxidation at a level that will remain useful for 10-20 years
  • Because it combines both state-of-the-art experimental approaches and theoretical methods it should become a reference book for anyone interested in studying insulators on semiconductor substrates, such as people in opto-electronics and microelectronics
  • Includes supplementary material: sn.pub/extras

Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 46)

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Table of contents (12 chapters)

  1. Front Matter

    Pages I-XIII
    Download chapter PDF

  2. Introduction

    • Leonard C. Feldman
    Pages 1-11

  3. Morphological Aspects of Silicon Oxidation in Aqueous Solutions

    • Melissa A. Hines
    Pages 13-34

  4. Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation

    • F. M. Ross, J. M. Gibson
    Pages 35-60

  5. Oxidation of H-Terminated Silicon

    • H. Nohira, T. Hattori
    Pages 61-88

  6. Layer-by-Layer Oxidation of Si(001) Surfaces

    • H. Watanabe, N. Miyata, M. Ichikawa
    Pages 89-105

  7. Atomic Dynamics During Silicon Oxidation

    • A. Pasquarello, M. S. Hybertsen, R. Car
    Pages 107-125

  8. First-Principles Quantum Chemical Investigations of Silicon Oxidation

    • Krishnan Raghavachari
    Pages 127-141

  9. Vibrational Studies of Ultra-Thin Oxides and Initial Silicon Oxidation

    • Y. J. Chabal, M. K. Weldon, K. T. Queeney, A. Estève
    Pages 143-159

  10. Ion Beam Studies of Silicon Oxidation and Oxynitridation

    • W. H. Schulte, T. Gustafsson, E. Garfunkel, I. J. R. Baumvol, E. P. Gusev
    Pages 161-191

  11. Local and Global Bonding at the Si-SiO2 Interface

    • S. T. Pantelides, R. Buczko, M. Ramamoorthy, S. Rashkeev, G. Duscher, S. J. Pennycook
    Pages 193-218

  12. Evolution of the Interfacial Electronic Structure During Thermal Oxidation

    • D. A. Muller, J. B. Neaton
    Pages 219-246

  13. Structure and Energetics of the Interface Between Si and Amorphous SiO2

    • Yuhai Tu, J. Tersoff
    Pages 247-255

  14. Back Matter

    Pages 257-262
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Keywords

About this book

The idea for a book dealing specifically with elementary processes in silicon oxidation was formulated after a stimulating symposium that I organized at the American Physical Society meeting in March, 1998. The symposium, en­ titled "Dynamics of silicon etching and oxidation", explored the mechanisms governing silicon oxidation. With three experimental talks (Hines, Weldon and Gibson) and two theoretical presentations (Pasquarello and Pantelides), it provided a good cross-section of the recent efforts to characterize the in­ terfacial region of silicon oxide grown on silicon. The novelty of this work comes from the present experimental and theo­ retical advances that allow the investigation of the formation of ultra-thin silicon oxides. Although structural characterization of bulk silicon oxides and electrical characterization of thin oxides and their interfaces with silicon have produced an extensive body of work over more than forty years, a mechanis­ tic understanding of the initial oxidation processes has remained elusive. In the past, both the experimental and theoretical efforts have been thwarted by the complexity of dealing with the formation of a mostly amorphous oxide on a crystalline substrate. In this book we present a survey of the state-of-the-art methods, both ex­ perimental and theoretical, specifically dealing with the issue of amorphous dielectric growth. Each chapter critically reviews and cross-correlates infor­ mation provided by experimental techniques, such as microscopy, spectro­ scopy, or scattering, with results obtained using theoretical methods, such as ab initio electronic structure calculations, molecular dynamics, and Monte Carlo simulations.

Reviews

From the reviews:

"Silicon remains the dominant microelectronic material … . One of the reasons for this is the ‘extraordinary perfection’ of its interface with its thermally grown oxide. … The book provides a valuable snapshot as at early 2000 of the range of diverse approaches, both theoretical and experimental, being applied … by some of the leading practitioners in this field. It would be of interest to scientists and engineers with a specialist’s interest in this or related interfaces." (M. A. Green, The Physicist, Vol. 38 (6), 2001)

Editors and Affiliations

  • Agere Systems, Electronic and Photonic Materials Physics Research, Murray Hill, USA

    Yves J. Chabal

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