Skip to main content
SpringerLink
Log in

Atomic Dynamics During Silicon Oxidation

  • Chapter
Fundamental Aspects of Silicon Oxidation

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 46))

Abstract

The rapid rate of development of the electronics industry is predicated on aggressive scaling rules for robust transistor design. In particular, each successive reduction in the size of the silicon based field effect transistor requires further thinning of the oxide layer which separates the polysilicon gate electrode from the channel. For integrated circuits in production now, this gate oxide has a thickness well below 50 Å. In this thickness regime, which is only an order of magnitude away from typical bond distances, a characterization of the Si(001)-SiO2 interface at the atomic scale is of critical importance. Knowledge of the atomic structure at this interface is intimately related to the understanding of the atomistic mechanisms that govern the oxidation process. In particular, the oxidation process used to fabricate integrated circuits yields a nearly perfect interface between amorphous silica and the silicon substrate for reasons that are still not well understood.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. B.E. Deal, A.S. Grove: J. Appl. Phys. 36, 3770 (1965).

    Article  CAS  Google Scholar 

  2. W.A. Tiller: J. Electrochem. Soc. 128, 689 (1981).

    Article  CAS  Google Scholar 

  3. J. Robertson: Phil. Mag. B 55, 673 (1987).

    Article  CAS  Google Scholar 

  4. A.M. Stoneham, C.R.M. Grovenor, A. Cerezo: Phil. Mag. B 55, 201 (1987).

    Article  CAS  Google Scholar 

  5. N.F. Mott, S. Rigo, F. Rochet, A.M. Stoneham: Phil. Mag. B 60, 189 (1989).

    Article  CAS  Google Scholar 

  6. J.D. Plummer: ‘Silicon Oxidation Kinetics from Deal-Grove to VLSI Process Models’. In: The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface - 3, ed. by H.Z. Massoud, E.H. Poindexter, C.R. Helms (The Electrochemical Society, Pennington, 1996), Volume 96-1, pp. 129–142.

    Google Scholar 

  7. F. Rochet, S. Rigo, M. Proment, C. d’Anterroches, C. Maillot, H. Roulet, G. Dufour: Adv. Phys. 35, 237 (1986).

    Article  CAS  Google Scholar 

  8. E.P. Gusev, H.C. Lu, T. Gustafsson, E. Garfunkel: Phys. Rev. B 52, 1759 (1995).

    Article  CAS  Google Scholar 

  9. E.P. Gusev, H.C. Lu, T. Gustafsson, E. Garfunkel: ‘New features of silicon oxidation in the ultrathin regime: an ion scattering study’. In: The Physics and Chemistry of Si02 and the Si-SiO 2 Interface - 3, ed. by H.Z. Massoud, E.H. Poindexter, C.R. Helms (The Electrochemical Society, Pennington, 1996), Volume 96-1, pp. 49–58.

    Google Scholar 

  10. E.P. EerNisse, Appl. Phys. Lett. 35, 8 (1979).

    Article  CAS  Google Scholar 

  11. B.E. Deal, M. Sklar, A.S. Grove, E.H. Snow: J. Electrochem. Soc.: Solid State Science 114, 266 (1967).

    CAS  Google Scholar 

  12. P. Fahey, P.B. Griffin, J.D. Plummer: Rev. Mod. Phys. 61, 289 (1989).

    Article  CAS  Google Scholar 

  13. S.C. Witczak, J.S. Suehle, M. Gaitan: Solid-State Electron. 35, 345 (1992).

    Article  CAS  Google Scholar 

  14. A. Stesmans, V.V. Afanas’ev: J. Phys.:Condens. Matter 10, L19 (1998).

    Article  CAS  Google Scholar 

  15. F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff, G. Hollinger: Phys. Rev. B 38, 6084 (1988).

    Article  CAS  Google Scholar 

  16. Z.H. Lu, M.J. Graham, D.T. Jiang, K.H. Tan: Appl. Phys. Lett. 63, 2941 (1993).

    Article  CAS  Google Scholar 

  17. K. Oshishi, T. Hattori: Jpn. J. Appl. Phys. 33, L675 (1994).

    Article  Google Scholar 

  18. S.T. Pantelides, M. Long: ‘Continuous-Random-Network Models for the Si- Si02 Interface’. In: The Physics of SiO 2 and its Interfaces, ed. by S.T. Pantelides (Pergamon, New York, 1978), pp. 339–343.

    Google Scholar 

  19. I. Ohdomari, H. Akatsu, Y. Yamakoshi, K. Koshimoto: J. Non-Cryst. Solids 89, 239 (1987); J. Appl. Phys. 62, 3751 (1987).

    Article  CAS  Google Scholar 

  20. F. Herman, R.V. Kasowski: J. Vac. Sci. Technol. 19, 395 (1981).

    Article  CAS  Google Scholar 

  21. M. Hane, Y. Miyamoto, A. Oshiyama: Phys. Rev. B 41, 12637 (1990).

    Article  CAS  Google Scholar 

  22. A. Pasquarello, M.S. Hybertsen, R. Car: Phys. Rev. Lett. 74, 1024 (1995).

    Article  CAS  Google Scholar 

  23. A. Pasquarello, M.S. Hybertsen, R. Car: Phys. Rev. B 53, 10942 (1996).

    Article  CAS  Google Scholar 

  24. A. Pasquarello, M.S. Hybertsen, R. Car: Appl. Phys. Lett. 68, 625 (1996).

    Article  CAS  Google Scholar 

  25. A. Pasquarello, M.S. Hybertsen, R. Car: Appl. Surf. Sci. 104/105, 317 (1996).

    Google Scholar 

  26. H. Kageshima, K. Shiraishi: Phys. Rev. Lett. 81, 5936 (1998).

    Article  CAS  Google Scholar 

  27. K.-O. Ng, D. Vanderbilt: Phys. Rev. B 59, 10132 (1999).

    Article  CAS  Google Scholar 

  28. M.M. Banaszak Holl, F.R. McFeely: Phys. Rev. Lett. 71, 2441 (1993).

    Article  CAS  Google Scholar 

  29. M.M. Banaszak Holl, S. Lee, F.R. McFeely: Appl. Phys. Lett. 85, 1097 (1994).

    Article  Google Scholar 

  30. A. Pasquarello, M.S. Hybertsen, R. Car: Phys. Rev. B 54, R2339 (1996).

    Article  CAS  Google Scholar 

  31. R. Car, M. Parrinello: Phys. Rev. Lett. 55, 2471 (1985).

    Article  CAS  Google Scholar 

  32. A. Pasquarello, K. Laasonen, R. Car, C. Lee, D. Vanderbilt: Phys. Rev. Lett. 69, 1982 (1992).

    Article  CAS  Google Scholar 

  33. K. Laasonen, A. Pasquarello, R. Car, C. Lee, D. Vanderbilt: Phys. Rev. B 47, 10142 (1993).

    Article  CAS  Google Scholar 

  34. Y. Miyamoto, A. Oshiyama: Phys. Rev. B 41, 12680 (1990).

    Article  CAS  Google Scholar 

  35. Y. Miyamoto, A. Oshiyama: Phys. Rev. B 43, 9287 (1991).

    Article  CAS  Google Scholar 

  36. B.B. Stefanov, K. Raghavachari: Surf. Sci. 389, L1159 (1997).

    Article  CAS  Google Scholar 

  37. K. Kato, T. Uda, K. Terakura: Phys. Rev. Lett. 80, 2000 (1998).

    Article  CAS  Google Scholar 

  38. H. Watanabe, K. Kato, T. Uda, K. Fujita, M. Ichikawa, T. Kawamura, K. Terakura: Phys. Rev. Lett. 80, 345 (1998).

    Article  CAS  Google Scholar 

  39. D.R. Hamann: Phys. Rev. Lett. 81, 3447 (1998).

    Article  CAS  Google Scholar 

  40. M. Ramamoorthy, S.T. Pantelides: Appl. Phys. Lett. 75, 115 (1999).

    Article  CAS  Google Scholar 

  41. A. Pasquarello, M.S. Hybertsen, R. Car: Nature 396, 58 (1998).

    Article  CAS  Google Scholar 

  42. G.B. Bachelet, D.R. Hamann, M. Schlüter: Phys. Rev. B 26, 4199 (1982).

    Article  CAS  Google Scholar 

  43. D. Vanderbilt: Phys. Rev. B 41, 7892 (1990).

    Article  Google Scholar 

  44. J.P. Perdew, A. Zunger: Phys. Rev. B 23, 5048 (1981).

    Article  CAS  Google Scholar 

  45. S. Nosé: Mol. Phys. 52, 255 (1984).

    Article  Google Scholar 

  46. W.G. Hoover: Phys. Rev. A 31, 1695 (1985).

    Article  Google Scholar 

  47. C.A. Angell: Science 267, 1924 (1995).

    Article  CAS  Google Scholar 

  48. J. Sarnthein, A. Pasquarello, R. Car: Phys. Rev. Lett. 74, 4682 (1995).

    Article  CAS  Google Scholar 

  49. J. Sarnthein, A. Pasquarello, R. Car: Phys. Rev. B 52, 12690 (1995)

    Article  CAS  Google Scholar 

  50. R. Car, M. Parrinello: Phys. Rev. Lett. 60, 204 (1988).

    Article  CAS  Google Scholar 

  51. I. Stich, R. Car, M. Parrinello: Phys. Rev. Lett. 63, 2240 (1989).

    Article  CAS  Google Scholar 

  52. L.C. Feldman, P.J. Silverman, J.S. Williams, T.E. Jackman, I. Stensgaard: Phys. Rev. Lett. 41, 1396 (1978).

    Article  CAS  Google Scholar 

  53. T.E. Jackman, J.R. MacDonald, L.C. Feldman, P.J. Silverman, I. Stensgaard: Surf. Sci. 100, 35 (1980).

    Article  CAS  Google Scholar 

  54. S.D. Kosowsky, P.S. Pershan, K.S. Krish, J. Bevk, M.L. Green, D. Brasen, L.C. Feldman, P.K. Roy: Appl. Phys. Lett. 70, 3119 (1997).

    Article  CAS  Google Scholar 

  55. A. Filipponi, F. Evangelisti, M. Benfatto, S. Mobilio, C.R. Natoli: Phys. Rev. B 40, 9636 (1989).

    Article  CAS  Google Scholar 

  56. I.J.R. Baumvol, C. Krug, F.C. Stedile, F.Gorris, W.H. Schulte: Phys. Rev. B 60, 1492 (1999).

    Article  CAS  Google Scholar 

  57. P. Deák: ‘The role of trivalent oxygen in electrically active complexes’. In Early Stages of Oxygen Precipitation in Silicon, ed. by R. Jones (Kluwer, Dordrecht, 1996), pp. 163–177.

    Google Scholar 

  58. G.-M. Rignanese: First-Principles Molecular Dynamics of SiO2: Surface and Interface with Si. Phd Thesis, Université Catholique de Louvain, Louvain-la-Neuve (1998).

    Google Scholar 

  59. G. Hollinger, E. Bergignat, H. Chermette, F. Himpsel, D. Lohez, M. Lannoo, M. Bensoussan: Phi. Mag l. B 55, 735 (1987).

    Article  CAS  Google Scholar 

  60. J.K. Rudra, W.B. Fowler: Phys. Rev. B 35, 8223 (1987).

    Article  CAS  Google Scholar 

  61. M. Boero, A. Pasquarello, J. Sarnthein, R. Car: Phys. Rev. Lett. 78, 887 (1997).

    Article  CAS  Google Scholar 

Download references

Authors
  1. A. Pasquarello
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. S. Hybertsen
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. R. Car
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Agere Systems, Electronic and Photonic Materials Physics Research, 600-700 Mountain Avenue, Murray Hill, NJ, 07974-0636, USA

    Yves J. Chabal

Rights and permissions

Reprints and permissions

Copyright information

© 2001 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Pasquarello, A., Hybertsen, M.S., Car, R. (2001). Atomic Dynamics During Silicon Oxidation. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_6

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-56711-7_6

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62583-1

  • Online ISBN: 978-3-642-56711-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation