Abstract
The excellent electrical properties of the Si-SiO2 interface is the primary reason for the domination of Si-based microelectronics. No other semiconductor has a native oxide of such outstanding quality. Alternative dielectrics on any semiconductor only recently began to show promise. The Si-SiO2 interface has been studied extensively by a very wide array of experimental and theoretical techniques for more than 40 years. Yet, many of its key properties have remained a mystery. With little effort one can get an extremely abrupt and smooth interface by thermal oxidation (Fig. 10.1). Such behavior is surprising in view of the fact that oxygen has a high solubility in Si. At the high oxidation temperatures (> 900°C) oxygen is quite mobile in Si. Somehow, interdiffusion, which would cause a rough interface, should take place, but obviously it does not to any appreciable degree.
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References
M. Ramamoorthy and S.T. Pantelides, Appl. Phys. Lett. 75, 115 (1999).
R. Buczko, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 84, 943 (2000).
R. Buczko, G. Duscher, S. J. Pennycook, and S. T. Pantelides, Phys. Rev. Lett. 85, 2168 (2000)
R. Buczko, G. Duscher, S. J. Pennycook, and S. T. Pantelides, “Short-range excitonic effects in insulators”, to be published.
G. Duscher, S. J. Pennycook, N. D. Browning, R. Rupangudi, C. Takoudis, H.-J. Gao, and R. Singh, “Structure, composition and strain profiling of Si/SiO2 interfaces”, Proceedings of International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, Maryland, March 23–27, pp 191–195 (1998).
S. J. Pennycook and P. D. Nellist, in: Impact of Electron and Scanning Probe Microscopy on Materials Research, edited by D. G. Rickerby, U. Valdré and G. Valdré (Kluwer Academic Publishers, The Netherlands, 1999), p. 161.
B. Rafferty, and S. J. Pennycook, Ultramicroscopy 78, 14 (1999).
E. L. Shirley, Phys. Rev. Lett. 80, 794 (1998).
P. Rez, J. Bruley, P. Brohan, M. Payne, and L. A. J. Garvie, Ultramicrosc. 59, 159 (1995).
F. C. Brown and O. P. Rustgi, Phys. Rev. Lett. 28, 497 (1972).
M. Altarelli and D. L. Dexter, Phys. Rev. Lett. 29, 1100 (1972).
X. Weng, P. Rez, and O. F. Sankey, Phys. Rev. B 40, 5694 (1989).
F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, and J. M. Woodall, Phys. Rev. B 38, 6084 (1988).
L. A. J. Garvie, P. Rez, J. R. Alvarez, P. R. Buseck, A. J. Craven, and R. Brydson, Amer. Mineral. 85, 732 (2000).
D. J. Wallis, P. H. Gaskell, and R. Brydson, Inst. Phys. Conf. Ser. No 138, 47 (1993).
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Pantelides, S.T., Buczko, R., Ramamoorthy, M., Rashkeev, S., Duscher, G., Pennycook, S.J. (2001). Local and Global Bonding at the Si-SiO2 Interface. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_10
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