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Semiconductor Physics Required for Bipolar-Transistor Modeling

  • Chapter
High-Frequency Bipolar Transistors

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 11))

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Abstract

The classical description of the electromagnetic field is based on Maxwell’s equations [1],

$$ \nabla \cdot D = \rho , $$
(2.1)
$$ \nabla \cdot B = 0, $$
(2.2)
$$ \nabla xE = - \partial B/\partial t, $$
(2.3)
$$ \nabla xH = J + \partial D/\partial t, $$
(2.4)

which describe the electric field E, the dielectric displacement (or electric flux density) D, the magnetic field H and the magnetic induction (or magnetic flux density) B; the vector J describes the electric current density due to moving charges, and ρ describes the charge density.

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  1. FH Kempten, University of Applied Sciences, Bahnhofstraße 61-63, 87435, Kempten/Allgäu, Germany

    Professor Dr. Michael Reisch

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© 2003 Springer-Verlag Berlin Heidelberg

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Reisch, M. (2003). Semiconductor Physics Required for Bipolar-Transistor Modeling. In: High-Frequency Bipolar Transistors. Springer Series in Advanced Microelectronics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55900-6_2

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  • DOI: https://doi.org/10.1007/978-3-642-55900-6_2

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