High-Frequency Bipolar Transistors

Physics, Modeling, Applications

  • Michael Reisch

Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 11)

Table of contents

  1. Front Matter
    Pages II-XX
  2. Introduction

    1. Front Matter
      Pages 1-1
    2. Michael Reisch
      Pages 3-116
  3. Physics and Modeling of High-Frequency Bipolar Transistors

    1. Front Matter
      Pages 117-117
    2. Michael Reisch
      Pages 411-459
  4. Circuits and Technology

    1. Front Matter
      Pages 461-461
    2. Michael Reisch
      Pages 463-509
    3. Michael Reisch
      Pages 511-550
    4. Michael Reisch
      Pages 551-574
  5. Back Matter
    Pages 575-658

About this book

Introduction

The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications.

Keywords

CMOS Modulation bipolar junction transistor drift transistor heterojunction bipolar transistor integrated circuit logic physics semiconductor transistor

Authors and affiliations

  • Michael Reisch
    • 1
  1. 1.FH KemptenUniversity of Applied SciencesKempten/AllgäuGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-55900-6
  • Copyright Information Springer-Verlag Berlin Heidelberg 2003
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-63205-1
  • Online ISBN 978-3-642-55900-6
  • Series Print ISSN 1437-0387
  • About this book
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