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Interface Engineering for High-κ Ge MOSFETs

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Advanced Gate Stacks for High-Mobility Semiconductors

Part of the book series: Advanced Microelectronics ((MICROELECTR.,volume 27))

Summary

Recent progress and current understanding of high-κ/Ge interface and its impact on device performances are summarized. After reviewing the properties of Ge oxide and high-κ/Ge interface, several reported Ge surface passivation techniques and improved characteristics of high-κ/Ge system using surface passivations are discussed.

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Author information

Authors and Affiliations

  1. National University of Singapore, Singapore

    S. J. Lee & C. Zhu

  2. University of Texas at Austin, Austin, TX, USA

    D. L. Kwong

Authors
  1. S. J. Lee
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  2. C. Zhu
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  3. D. L. Kwong
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Editor information

Editors and Affiliations

  1. National Center for Scientific Research DEMOKRITOS, Patriarchou Grigoriou & Neapoleos, 15310, Aghia Paraskevi, Athens, Greece

    Athanasios Dimoulas

  2. QUALCOMM Inc., 5775 Morehouse Dr., SanDiego, CA, 92121, USA

    Evgeni Gusev

  3. QUALCOMM MEMS Technologies, 2581 Junction Ave., SanJose, CA, 95134, USA

    Evgeni Gusev

  4. Department for Materials Science, Stanford University, McCullogh Building, Stanford, CA, 94305, USA

    Paul C. McIntyre

  5. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    Marc Heyns

  6. MTM Department, Katholieke Universiteit Leuven, Belgium

    Marc Heyns

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© 2007 Springer Berlin Heidelberg

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Lee, S.J., Zhu, C., Kwong, D.L. (2007). Interface Engineering for High-κ Ge MOSFETs. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_5

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  • DOI: https://doi.org/10.1007/978-3-540-71491-0_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-71490-3

  • Online ISBN: 978-3-540-71491-0

  • eBook Packages: EngineeringEngineering (R0)

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