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Strained-Si CMOS Technology

  • Chapter
Advanced Gate Stacks for High-Mobility Semiconductors

Part of the book series: Advanced Microelectronics ((MICROELECTR.,volume 27))

Summary

Improvement in performance of Si MOSFETs through conventional device scaling has become more difficult, because of several physical limitations associated with the device miniaturization. Thus, much attention has recently been paid to the mobility enhancement technology through applying strain into CMOS channels. This chapter reviews this strained-Si CMOS technology with an emphasis on the mechanism of mobility enhancement due to strain. The device physics for improving drive current of MOSFETs is summarized from the viewpoint of electronic states of carriers in inversion layers and, in particular, the subband structures. In addition, recent experimental results on implementing strain into CMOS channels are described.

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Authors and Affiliations

  1. Graduate School of Frontier Science, The University of Tokyo, Japan

    S. Takagi

  2. MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), Japan

    S. Takagi

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Editors and Affiliations

  1. National Center for Scientific Research DEMOKRITOS, Patriarchou Grigoriou & Neapoleos, 15310, Aghia Paraskevi, Athens, Greece

    Athanasios Dimoulas

  2. QUALCOMM Inc., 5775 Morehouse Dr., SanDiego, CA, 92121, USA

    Evgeni Gusev

  3. QUALCOMM MEMS Technologies, 2581 Junction Ave., SanJose, CA, 95134, USA

    Evgeni Gusev

  4. Department for Materials Science, Stanford University, McCullogh Building, Stanford, CA, 94305, USA

    Paul C. McIntyre

  5. IMEC, Kapeldreef 75, 3001, Leuven, Belgium

    Marc Heyns

  6. MTM Department, Katholieke Universiteit Leuven, Belgium

    Marc Heyns

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Takagi, S. (2007). Strained-Si CMOS Technology. In: Dimoulas, A., Gusev, E., McIntyre, P.C., Heyns, M. (eds) Advanced Gate Stacks for High-Mobility Semiconductors. Advanced Microelectronics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71491-0_1

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