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Metal Oxide Semiconductor Thin-Film Transistors: Device Physics and Compact Modeling

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Outlook and Challenges of Nano Devices, Sensors, and MEMS

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Abstract

Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most promising technology in the field of flexible electronics and flat-panel displays because of their high mobility, low-temperature fabrication process, and spatial uniformity of device characteristics. In this chapter, we review the development and operating principles of the metal oxide semiconductor TFTs, as well as the compact-modeling framework. For both the non-degenerate and degenerate conductions, the core compact models, including the analysis of surface potential and drain current, are discussed and compared. To enhance the computational efficiency of the calculations, an explicit and closed-form scheme for the surface potential solution is developed by including both exponential deep and tail states. The resulting DC and surface potential models give accurate descriptions with single-piece formulas, which are suitable for CAD applications. The numerical simulation and experimental results are also included in order to assess the validity of the models introduced.

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Authors and Affiliations

  1. College of Information Science and Technology, Jinan University, Guangzhou, 510630, China

    Wanling Deng, Jielin Fang, Xixiong Wei & Fei Yu

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  1. Wanling Deng
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  2. Jielin Fang
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Correspondence to Wanling Deng .

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Editors and Affiliations

  1. State Key Lab of Electronic Thin Film & Integrated Device, University of Electronic Science & Technology of China, Chengdu, China

    Ting Li

  2. Microelectronics & Solid-state Electronics College, University of Electronic Science & Technology of China, Chengdu, China

    Ziv Liu

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Deng, W., Fang, J., Wei, X., Yu, F. (2017). Metal Oxide Semiconductor Thin-Film Transistors: Device Physics and Compact Modeling. In: Li, T., Liu, Z. (eds) Outlook and Challenges of Nano Devices, Sensors, and MEMS. Springer, Cham. https://doi.org/10.1007/978-3-319-50824-5_3

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  • DOI: https://doi.org/10.1007/978-3-319-50824-5_3

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  • Online ISBN: 978-3-319-50824-5

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