Abstract
The trapping of charge carriers in thin dielectric films is discussed in the present section. Mechanisms affecting electron confinement are studied in order to gain insight into the interplay between the various charged species contributing to dielectric failure (i.e., electrons, traps, and ions). A novel detection method for identifying ion drift in interconnect devices is presented. This technique is based on the change in charge fluence as a result of ionic drift during BTS. Leakage current relaxation is described as originating from the trapping of charge carriers into defects (i.e., traps and ions). A model is proposed for describing the kinetics of charge trapping at very early stages of field and temperature stress. This section concludes with a mathematical representation of electron trapping that will serve as the premise for the theory of dielectric breakdown in nano-porous films.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Atkin, J. M., Shaw, T. M., Liniger, E., Laibowitz, R. B., & Heinz, T. F. (2012, April). The effect of voltage bias stress on temperature-dependent conduction properties of low-κ dielectrics. In 2012 I.E. International Reliability Physics Symposium (IRPS) (pp. BD.1.1–BD.1.6). Piscataway, NJ: IEEE.
Book, G. W., Pfeifer, K., & Smith, S. (2002). Barrier integrity testing of Ta using triangular voltage sweep and a novel CV-BTS test structure. Microelectronic Engineering, 64(1), 255–260.
Borja, J., Plawsky, J. L., Lu, T. M., Bakhru, H., & Gill, W. N. (2014a). Current leakage relaxation and charge trapping in ultra-porous low-κ materials. Journal of Applied Physics, 115(8), 084107–084107.6.
Borja, J., Plawsky, J. L., Lu, T. M., Gill, W. N., Shaw, T. M., Laibowitz, R. B., … Bonilla, G. (2014b). Detection of charge carrier confinement into mobile ionic defects in nanoporous dielectric films for advanced interconnects. Journal of Vacuum Science & Technology A, 32(5), 051508.
Borja, J., Plawsky, J. L., Lu, T. M., & Gill, W. N. (2013). On the dynamics of Cu ions injection into low-κ nanoporous materials under oscillating applied fields. Journal of Applied Physics, 113(3), 034104–034104.7.
Chen, R. (2003). Apparent stretched-exponential luminescence decay in crystalline solids. Journal of Luminescence, 102, 510–518.
Chen, X., Henderson, B., & O’Donnell, K. P. (1992). Luminescence decay in disordered low‐dimensional semiconductors. Applied Physics Letters, 60(21), 2672–2674.
Cui, H., & Burke, P. A. (2004). Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions. Applied Physics Letters, 84(14), 2629–2631.
Ginger, D. S., & Greenham, N. C. (2000). Charge injection and transport in films of CdSe nanocrystals. Journal of Applied Physics, 87(3), 1361–1368.
Gischia, G. G., Croes, K., Groeseneken, G., Tokei, Z., Afanas' ev, V., & Zhao, L. (2010, May). Study of leakage mechanism and trap density in porous low-κ materials. In 2010 I.E. International Reliability Physics Symposium (IRPS) (pp. 549–555). Piscataway, NJ: IEEE.
Haase, G. S. (2009). A model for electric degradation of interconnect low-κ dielectrics in microelectronic integrated circuits. Journal of Applied Physics, 105(4), 044908–044908.10.
Haase, G. S., Ogawa, E. T., & McPherson, J. W. (2005). Reliability analysis method for low-κ interconnect dielectrics breakdown in integrated circuits. Journal of Applied Physics, 98(3), 034503–034503.8.
Hamill, W. H., & Funabashi, K. (1977). Kinetics of electron trapping reactions in amorphous solids; A non-Gaussian diffusion model. Physical Review B, 16(12), 5523–5227.
Lundstrom, M. (2009). Fundamentals of carrier transport. Cambridge: Cambridge University Press.
Macdonald, J. R. (1997). Limiting electrical response of conductive and dielectric systems, stretched-exponential behavior, and discrimination between fitting models. Journal of Applied Physics, 82(8), 3962–3971.
Mauckner, G., Thonke, K., Baier, T., Walter, T., & Sauer, R. (1994). Temperature‐dependent lifetime distribution of the photoluminescence S‐band in porous silicon. Journal of Applied Physics, 75(8), 4167–4170.
Pavesi, L. (1996). Influence of dispersive exciton motion on the recombination dynamics in porous silicon. Journal of Applied Physics, 80(1), 216–225.
Pavesi, L., & Ceschini, M. (1993). Stretched-exponential decay of the luminescence in porous silicon. Physical Review B, 48, 95781–17628.
Phillips, J. C. (1996). Stretched exponential relaxation in molecular and electronic glasses. Reports on Progress in Physics, 59(9), 1133–1207.
Phillips, J. C. (2006). Axiomatic theories of ideal stretched exponential relaxation (SER). Journal of Non-Crystalline Solids, 352(42), 4490–4494.
Phillips, J. C. (2011). Microscopic aspects of stretched exponential relaxation (SER) in homogeneous molecular and network glasses and polymers. Journal of Non-Crystalline Solids, 357(22), 3853–3865.
Romanov, V. P. (1982). Stationary distribution of mobile ions in a dielectric with regard to their elastic interaction with the medium. Physica Status Solidi (a), 70(2), 525–532.
Scher, H., & Montroll, E. W. (1975). Anomalous transit-time dispersion in amorphous solids. Physical Review B, 12(6), 2455–2477.
Scher, H., Shlesinger, M. F., & Bendler, J. T. (1991). Time-scale invariance in transport and relaxation. Physics Today, 44(1), 26–34.
Shlesinger, M. F., & Montroll, E. W. (1984). On the Williams—Watts function of dielectric relaxation. Proceedings of the National Academy of Sciences, 81(4), 1280–1283.
Wolters, D. R., & Van Der Schoot, J. J. (1985). Kinetics of charge trapping in dielectrics. Journal of Applied Physics, 58(2), 831–837.
Wong, B. P., et al. (2005). Nano-CMOS circuit and physical design. Hoboken, NJ: Wiley.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2016 The Author(s)
About this chapter
Cite this chapter
Borja, J.P., Lu, TM., Plawsky, J. (2016). Kinetics of Charge Carrier Confinement in Thin Dielectrics. In: Dielectric Breakdown in Gigascale Electronics. SpringerBriefs in Materials. Springer, Cham. https://doi.org/10.1007/978-3-319-43220-5_6
Download citation
DOI: https://doi.org/10.1007/978-3-319-43220-5_6
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-43218-2
Online ISBN: 978-3-319-43220-5
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)