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Dielectric Breakdown in Gigascale Electronics

Time Dependent Failure Mechanisms

  • Juan Pablo Borja
  • Toh-Ming Lu
  • Joel Plawsky

Part of the SpringerBriefs in Materials book series (BRIEFSMATERIALS)

Table of contents

  1. Front Matter
    Pages i-viii
  2. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 1-9
  3. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 11-19
  4. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 21-26
  5. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 27-36
  6. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 37-57
  7. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 59-75
  8. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 77-91
  9. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 93-98
  10. Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
    Pages 99-105

About this book

Introduction

This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics.  Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.

Keywords

Chip Interconnects Dielectric Breakdown Interconnect Reliability Science Low-k Interconnect Metal Catalyzed Dielectric Failure Nanoporous Dielectrics Reliability of Gigascale Electronics Reliability of Modern Porous Low-k Films TDDB for Gigascale Electronic Devices TDDB in Modern Interconnects Time-dependent-dielectric-breakdown (TDDB)

Authors and affiliations

  • Juan Pablo Borja
    • 1
  • Toh-Ming Lu
    • 2
  • Joel Plawsky
    • 3
  1. 1.General Electric Global Research CenterNiskayunaUSA
  2. 2.Department of Physics, Applied Physics, & AstronomyRensselaer Polytechnic InstituteTroyUSA
  3. 3.Chemical and Biological EngineeringRensselaer Polytechnic InstituteTroyUSA

Bibliographic information

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