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Substrates and Materials

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Power GaN Devices

Part of the book series: Power Electronics and Power Systems ((PEPS))

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Abstract

The choice of substrate and the material requirements for GaN-based power transistors for switching applications strongly depend on the device architecture. While to date most efforts have been directed toward the fabrication of lateral devices, vertical device layouts have recently gained interest, catalyzed by the progress in the development of larger size bulk GaN substrates. The vertical devices have the advantage that the high fields are held within the bulk of the material rather than on the surface. Large-area GaN substrates, however, are still very expensive, making a lateral device layout on a foreign substrate such as silicon, which is available in wafer sizes up to 12″, currently more attractive.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, CA, 93106, USA

    Stacia Keller

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  1. Dept of Information Engineering, University of Padova, Padova, Italy

    Matteo Meneghini

  2. Department of Information Engineering, University of Padova, Padova, Italy

    Gaudenzio Meneghesso

  3. Department of Information Engineering, University of Padova, Padova, Italy

    Enrico Zanoni

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Keller, S. (2017). Substrates and Materials. In: Meneghini, M., Meneghesso, G., Zanoni, E. (eds) Power GaN Devices. Power Electronics and Power Systems. Springer, Cham. https://doi.org/10.1007/978-3-319-43199-4_2

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