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Power GaN Devices

Materials, Applications and Reliability

  • Matteo Meneghini
  • Gaudenzio Meneghesso
  • Enrico Zanoni

Part of the Power Electronics and Power Systems book series (PEPS)

Table of contents

  1. Front Matter
    Pages i-x
  2. Stacia Keller
    Pages 27-52
  3. Denis Marcon, Steve Stoffels
    Pages 53-68
  4. Umesh K. Mishra, Matthew Guidry
    Pages 69-99
  5. Srabanti Chowdhury
    Pages 101-121
  6. Elison Matioli, Bin Lu, Daniel Piedra, Tomás Palacios
    Pages 123-144
  7. Andrew M. Armstrong, Robert J. Kaplar
    Pages 145-163
  8. Gilberto Curatola, Giovanni Verzellesi
    Pages 165-196
  9. Isabella Rossetto, Davide Bisi, Carlo de Santi, Antonio Stocco, Gaudenzio Meneghesso, Enrico Zanoni et al.
    Pages 197-236
  10. Peter Moens, Aurore Constant, Abhishek Banerjee
    Pages 319-344
  11. Fred Lee, Qiang Li, Xiucheng Huang, Zhengyang Liu
    Pages 345-375
  12. Back Matter
    Pages 377-380

About this book

Introduction

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field.  It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach.

This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Keywords

GaN-based nanowire transistors GaN-based power transistors GaN-based vertical transistors Gallium nitride on silicon (GaN-on-Si) Gallium nitride power transistors Lateral GaN-based power devices Nanowire-based HEMTs Normally-off devices Power GaN device reliability Single and double heterostructure devices

Editors and affiliations

  • Matteo Meneghini
    • 1
  • Gaudenzio Meneghesso
    • 2
  • Enrico Zanoni
    • 3
  1. 1.Dept of Information EngineeringUniversity of PadovaPadovaItaly
  2. 2.Department of Information EngineeringUniversity of PadovaPadovaItaly
  3. 3.Department of Information EngineeringUniversity of PadovaPadovaItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-43199-4
  • Copyright Information Springer International Publishing Switzerland 2017
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-43197-0
  • Online ISBN 978-3-319-43199-4
  • Series Print ISSN 2196-3185
  • Series Online ISSN 2196-3193
  • Buy this book on publisher's site
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