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Electrothermal Modeling of Carbon Nanotube-Based TSVs

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Carbon Nanotubes for Interconnects

Abstract

Three-dimensional integrated circuits (3-D ICs) have attracted much interest in the past one decade because they can achieve technically breakthrough and significant enhancement in their electrical performance in comparison with that of conventional two-dimensional ICs. As the key technique for realization of ultra-high density integration and miniaturized packaging of 3-D ICs, through-silicon via (TSV) provides vertical electrical connection between different functional chips through multilayered silicon dies [1–3]. Moreover, it offers an opportunity for heterogeneously flexible integration, which is a powerful and effective solution called as “More-than-Moore” technology. Till now, there are numerous papers published on modeling, characterizing, and fabricating many different TSV structures for development of various 3-D ICs [4–13]. The most common TSV filling materials currently being used are copper (Cu), tungsten (W), and even doped poly-silicon. However, there are still some reliability and thermal management issues to be further studied in the realization of TSV-based 3-D ICs.

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Acknowledgments

This study was supported by the National Natural Science Foundation of China under Grants 61171037, 61431014, 61504033, and 61504121.

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Authors and Affiliations

  1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310058, China

    Wen-Yan Yin & Wenchao Chen

  2. Key Lab of RF Circuits and Systems of Ministry of Education, Microelectronic CAD Center, Hangzhou Dianzi University, Hangzhou, 310018, China

    Wen-Sheng Zhao

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  1. Wen-Yan Yin
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  2. Wen-Sheng Zhao
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Correspondence to Wen-Yan Yin .

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Editors and Affiliations

  1. CNRS-LIRMM/University of Montpellier, Montpellier, France

    Aida Todri-Sanial

  2. CEA LITEN, Grenoble, France

    Jean Dijon

  3. University of Cassino and Southern Lazio, Cassino, Italy

    Antonio Maffucci

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Yin, WY., Zhao, WS., Chen, W. (2017). Electrothermal Modeling of Carbon Nanotube-Based TSVs. In: Todri-Sanial, A., Dijon, J., Maffucci, A. (eds) Carbon Nanotubes for Interconnects. Springer, Cham. https://doi.org/10.1007/978-3-319-29746-0_9

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  • DOI: https://doi.org/10.1007/978-3-319-29746-0_9

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