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Layout Decomposition for Triple Patterning

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Design for Manufacturability with Advanced Lithography

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Abstract

Layout decomposition is a key challenge for multiple patterning lithography (MPL) (Fig. 2.1). When the distance between two input features is less than minimum coloring distance min s , they need to be assigned to different masks to avoid a coloring conflict. Sometimes coloring conflict can also be resolved by inserting stitch to split a pattern into two touching parts. However this introduces stitches, which lead to yield loss because of overlay error. Therefore, two of the main objectives in layout decomposition are conflict minimization and stitch minimization.

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Authors and Affiliations

  1. ECE Department, The University of Texas, Austin, TX, USA

    Bei Yu & David Z. Pan

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  1. Bei Yu
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  2. David Z. Pan
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Yu, B., Pan, D.Z. (2016). Layout Decomposition for Triple Patterning. In: Design for Manufacturability with Advanced Lithography. Springer, Cham. https://doi.org/10.1007/978-3-319-20385-0_2

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  • DOI: https://doi.org/10.1007/978-3-319-20385-0_2

  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-20384-3

  • Online ISBN: 978-3-319-20385-0

  • eBook Packages: EngineeringEngineering (R0)

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