Abstract
As discussed in the previous chapter, one of the remaining technical problems related to mm-Wave CMOS transmitters is the poor average efficiency when transmitting complex amplitude- and phase-modulated signals (e.g., 16-QAM). The cause of this low efficiency is the required back-off from the P 1dB to meet EVM and transmit spectral mask specifications. A conventional PA only provides maximum efficiency near P SAT . For a 6-dB back-off from P 1dB , the output power and PAE of the state-of-the-art PAs remain below 9 dBm and 5 % [1, 2], respectively. Although this issue is well known by the mm-Wave designers, the optimization of mm-Wave TX is still limited to the circuit level (i.e., optimization of the PA and the up-conversion chain). Low-GHz linearization or efficiency enhancement techniques are usually not applied mainly due to the inferior performance of active and passive devices at mm-Wave frequencies and the wideband processing bandwidth required by the mm-Wave system.
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Notes
- 1.
In Fig. 5.5, \(R_{L} = 2R_{O} = 50\,\Omega\) is assumed which gives more realistic numbers for mm-Wave PAs and also achieves the impedance matching condition.
- 2.
The designs of the I/Q modulator and the PPF of this outphasing TX are similar to the ones in E-band TX. The detailed analysis will be provided in Chap. 6
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Zhao, D., Reynaert, P. (2015). mm-Wave Outphasing Transmitter. In: CMOS 60-GHz and E-band Power Amplifiers and Transmitters. Analog Circuits and Signal Processing. Springer, Cham. https://doi.org/10.1007/978-3-319-18839-3_5
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