Abstract
Gas flow is an essential mechanism of transporting react ants and materials to the surface of a wafer in microelectronic processes. Accurate modeling of these flows is therefore vital in a simulation to determine such properties as uniformity of deposition. In this chapter we present an overview of such flows and the equations and boundary conditions which describe them.
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© 1995 Birkhäuser Verlag
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Kersch, A., Morokoff, W.J. (1995). Modeling of Gas Flow. In: Transport Simulation in Microelectronics. Progress in Numerical Simulation for Microelectronics, vol 3. Birkhäuser Basel. https://doi.org/10.1007/978-3-0348-9080-9_2
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DOI: https://doi.org/10.1007/978-3-0348-9080-9_2
Publisher Name: Birkhäuser Basel
Print ISBN: 978-3-0348-9898-0
Online ISBN: 978-3-0348-9080-9
eBook Packages: Springer Book Archive