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CVD of Conductors

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Chemical Vapor Deposition

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Abstract

Conductor systems in very large scale integrated VLSI circuits act as the conduits for signals to be transported to and away from electrical devices. As device dimensions and film thicknesses scale down, thin film properties of conductors (see Chapter 2) begin to dominate and special processing conditions become necessary. For instance, it becomes essential to lower the processing temperature so as to minimize undesirable thermally activated processes, such as hillock formation in aluminum-based metallization, or interdiffusion and reaction between adjacent films. Similarly, incorporation of impurities in the film matrix can result in significant degradation in properties, such as resistivity, film roughness, and stress, as the films get thinner. In this chapter, we will first review the requirements for conductor systems in VLSI circuits, without regard to the mode of deposition of the conductors. We will then consider the CVD of individual films, keeping in mind the device requirements. Finally we will examine more recent trends in CVD of conductors, with respect to new materials and with respect to newer CVD processes for established films.

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Authors
  1. Srinivasan Sivaram
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© 1995 Springer Science+Business Media New York

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Sivaram, S. (1995). CVD of Conductors. In: Chemical Vapor Deposition. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-4751-5_8

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  • DOI: https://doi.org/10.1007/978-1-4757-4751-5_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4757-4753-9

  • Online ISBN: 978-1-4757-4751-5

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