Abstract
The electroluminescence (EL) and photoluminescence (PL) of 50–200 keV N+ implanted CdS are reported. From PL measurements at 100°K, it was found that the green emissions of A-exciton and its LO-phonon replicas and the orange-yellow emission originated from native defect center or Ag impurity were strongly reduced by implantation. The green emissions and two another red bands at 7250 Å and 9000 Å appeared after annealing at 400°C for 10 minutes. The orange-yellow PL emission, however, did not recover, CdS diodes produced by N+ implantation showed three kinds of EL emission. Group A (green) is due to A-exciton associated with LO-phonon and group B (orange-yellow) originates from native defect center or Ag impurity in the substrate and group C (dark red) is due to defect centers or nitrogen center produced by implantation.
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References
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© 1973 Plenum Press, New York
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Shiraki, Y., Shimada, T., Komatsubara, K.F. (1973). Electroluminescence and Photoluminescence of N+ Implanted CdS. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_34
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_34
Publisher Name: Springer, Boston, MA
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