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Ion Implantation in Semiconductors and Other Materials

  • Book
  • © 1973

Overview

Editors:
  1. Billy L. Crowder

    1. IBM Thomas J. Watson Research Center, Yorktown Heights, USA

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Part of the book series: The IBM Research Symposia Series (IRSS)

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Table of contents (56 chapters)

  1. Front Matter

    Pages i-xii
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  2. Radiation Damage

    1. Front Matter

      Pages 1-1
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    2. Radiation Damage in Metals and Semiconductors

      • W. Frank
      Pages 3-16

    3. Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon

      • C. B. Norris, K. L. Brower, F. L. Vook
      Pages 17-17

    4. Internal Friction Study of Point Defects in Boron-Implanted Silicon

      • S. I. Tan, B. S. Berry, W. F. J. Frank
      Pages 19-30

    5. Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation

      • T. Matsumori, T. Kobayashi, H. Maekawa, T. Izumi
      Pages 31-38

    6. Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs

      • H. J. Stein
      Pages 39-48

    7. Defect Aggregation in Ion-Implanted GaAs

      • G. W. Arnold
      Pages 49-58

    8. On Silicon Amorphisation During Different Mass Ions Implantation

      • E. C. Baranova, V. M. Gusev, Yu. V. Martynenko, C. V. Starinin, I. B. Hailbullin
      Pages 59-71

  3. Silicon

    1. Front Matter

      Pages 73-73
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    2. The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals

      • P. Blood, G. Dearnaley, M. A. Wilkins
      Pages 75-85

    3. Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance

      • J. C. C. Tsai, J. M. Morabito, R. K. Lewis
      Pages 87-98

    4. The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Si

      • F. H. Eisen, J. D. Haskell, E. Rimini, J. W. Mayer
      Pages 99-110

    5. Concentration Profiles of Arsenic Implanted in Silicon

      • M. Iwaki, K. Gamo, K. Masuda, S. Namba, S. Ishihara, I. Kimura
      Pages 111-118

    6. Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon

      • K. Wittmaack, J. Maul, F. Schulz
      Pages 119-131

    7. Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon

      • W. K. Hofker, H. W. Werner, D. P. Oosthoek, H. A. M. de Grefte
      Pages 133-145

    8. Channeling Analysis and Electrical Behavior of Boron Implanted Silicon

      • Youichi Akasaka, Kazuo Horie
      Pages 147-157

    9. Si-SiO2 Interface States Induced by Implantation of Various Ion Species

      • Takashi Tokuyama, Isao Yoshida, Terunori Warabisako
      Pages 159-168

  4. Theory and Range

    1. Front Matter

      Pages 169-169
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    2. Theory of the Spatial Distributions of Ion Range and Energy Deposition

      • David K. Brice
      Pages 171-192
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Keywords

About this book

During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in 1971. At the present time, our under­ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta­ tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta­ tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta­ tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.

Editors and Affiliations

  • IBM Thomas J. Watson Research Center, Yorktown Heights, USA

    Billy L. Crowder

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