Abstract
Four well-resolved internal friction peaks have been observed in boron-implanted silicon, with characteristics which suggests that each peak originates from a separate species of point defect. From information on the Symmetry, reorientation kinetics and annealing behavior of the defects, it is concluded that the defects consist of boron and silicon interstitials. Specific assignments are proposed for the atomic configuration and charge state of the defects.
Work supported in part by the U.S. Army Research Office, Durham. On scientific leave from Max-P1anck-Institute für Metallforschung, Stuttgart, and University of Stuttgart, Germany.
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References
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© 1973 Plenum Press, New York
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Tan, S.I., Berry, B.S., Frank, W.F.J. (1973). Internal Friction Study of Point Defects in Boron-Implanted Silicon. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_3
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_3
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