Abstract
Different possibilities for amorphization of silicon in connection with boron implantation have been compared. The methods described are silicon and neon predamage implants, implantation of BF2 molecules, and implantation of boron at 77K. All implantations show a typical amorphous annealing behavior with a steep increase in activation around 500-650°C without reverse annealing. Depending on annealing temperature and time, doping and mobility profiles were measured. For annealing temperatures below 900°C damage dependent electrical activation occurs with complete activation above 650°C in the recrystallized amorphous layer. All four methods are useful for doping, but mobility after annealing only for cold boron and neon predamage implants approach values corresponding to bulk data. Only in the case of neon predamage implantations the whole doping profile can be placed into the amorphous layer in order to achieve low annealing temperatures.
Work sponsored by “Deutsche Forschungsgemeinschaft”.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
N. G. Blamires, European Conf. on Ion Implantation, Reading, p. 52, P. Peregrinus Ltd., Stevenage (1970).
L. O. Bauer, Ion Implantation in Semiconductors, p. 70, Eds. I. Ruge and J. Graul, Springer, Berlin (1971).
H. Mllller, H. Ryssel and I. Ruge, Ion Implantation in Semiconductors, p. 85, Eds. I. Ruge and J. Graul, Springer, Berlin (1971).
R. L. Pertritz, Phys. Rev. 110, 1254 (1958).
T. E. Seidel, Ion Implantation in Semiconductors, p. 47, Eds. I. Ruge and J. Graul, Springer, Berlin (1971).
H. Müller, Thesis (1972).
D. K. Brice, Ion Implantation, p. 101, Eds. F. H. Eisen and C. T. Chadderton, Gordon Breach, London (1971).
F. H. Eisen, B. Welch, J. E. Westmoreland and J. W. Mayer, Proc. Int. Conf. Atomic Collision Phenomena in Solids, p. 111, Eds. D. W. Palmer, M. W. Thomson and P. D. Townsend, American Elsevier, New York (1970).
W. S. Johnson and J. F. Gibbons, Projected Range Statistics in Semiconductors., Stanford University Bookstore, Stanford (1965).
Vick and Whittle, J. Electrochem. Soc. 116, 1142 (1969).
T. E. Seidel and A. U. Mac Rae, Trans. Met. Soc. AIME 245, 491 (1969).
W. K. Hofker, H. W. Werner, D. P. Oosthoek and H. A. M. H. A. M. de Grefte, these proceedings
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1973 Plenum Press, New York
About this chapter
Cite this chapter
Ryssel, H., Müller, H., Schmid, K., Ruge, I. (1973). Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon Layers. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_19
Download citation
DOI: https://doi.org/10.1007/978-1-4684-2064-7_19
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2066-1
Online ISBN: 978-1-4684-2064-7
eBook Packages: Springer Book Archive